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DTM4483S
P-Channel 30 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
()
0.068 at V
GS
= - 10 V
0.110 at V
GS
= - 4.5 V
I
D
(A)
a
Q
g
(Typ.)
4.6
- 4.6
- 3.4
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
30
V
F
(V)
Diode Forward Voltage
0.44 V at 1 A
I
D
(A)
a
2
APPLICATIONS
• Battery Management in Notebook PC
• Non-synchronous Buck Converter in HDD
S
K
SO-8
A
A
S
G
1
2
3
4
Top
View
8
7
6
5
K
K
D
D
D
P-Channel MOSFET
A
G
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
P
D
T
J
, T
stg
Limit
- 30
- 30
± 20
- 4.6
- 3.6
- 3.8
b, c
- 3
b, c
- 20
-2
- 1.4
b, c
- 1.4
b
-2
2.75
1.75
1.75
b, c
1.10
b, c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET) (t = 300 µs)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
A
Maximum Power Dissipation (MOSFET and Schottky)
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)
b, c, d
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on FR4 board.
c. t
10 s.
d. Maximum under steady state conditions is 120 °C/W.
Symbol
R
thJA
R
thJF
Typical
60
35
Maximum
71.5
45
Unit
°C/W
1
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