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CY7C1380D-167AXC 参数 Datasheet PDF下载

CY7C1380D-167AXC图片预览
型号: CY7C1380D-167AXC
PDF下载: 下载PDF文件 查看货源
内容描述: 18兆位( 512K ×36 / 1M ×18 )流水线SRAM [18-Mbit (512K x 36/1M x 18) Pipelined SRAM]
分类和应用: 静态存储器
文件页数/大小: 30 页 / 1186 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Truth Table
Operation
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
READ Cycle, Begin Burst
READ Cycle, Begin Burst
WRITE Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
WRITE Cycle, Continue Burst
WRITE Cycle, Continue Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
Add. Used
None
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
CE
1
H
L
L
L
L
X
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
CE
2
X
L
X
L
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
CE
3
X
X
H
X
H
X
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
ZZ ADSP ADSC
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
L
L
H
H
X
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
X
X
L
L
X
X
X
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
ADV
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
WRITE OE CLK
X
X
X
X
X
X
X
X
L
H
H
H
H
H
H
L
L
H
H
H
H
L
L
X
X
X
X
X
X
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
L-H
L-H
L-H
L-H
L-H
X
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
DQ
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Q
Tri-State
D
Q
Tri-State
Q
Tri-State
Q
Tri-State
D
D
Q
Tri-State
Q
Tri-State
D
D
Notes:
4. X = Don't Care, H = Logic HIGH, L = Logic LOW.
5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
X
. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05543 Rev. *E
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