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CY7C1061AV33-10ZXI 参数 Datasheet PDF下载

CY7C1061AV33-10ZXI图片预览
型号: CY7C1061AV33-10ZXI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 1M ×16 )静态RAM [16-Mbit (1M x 16) Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 642 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1061AV33  
AC Switching Characteristics (Over the Operating Range) [6]  
–10  
–12  
Parameter  
Description  
Unit  
Min  
Max  
Min  
Max  
Read Cycle  
tpower  
tRC  
VCC(typical) to the first access [7]  
Read Cycle Time  
1
1
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
10  
12  
tAA  
Address to Data Valid  
10  
12  
tOHA  
tACE  
Data Hold from Address Change  
CE1 LOW/CE2 HIGH to Data Valid  
OE LOW to Data Valid  
3
3
10  
5
12  
6
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tPU  
OE LOW to Low-Z  
OE HIGH to High-Z [8]  
1
3
0
1
3
0
5
5
6
6
CE1 LOW/CE2 HIGH to Low-Z [8]  
CE1 HIGH/CE2 LOW to High-Z [8]  
CE1 LOW/CE2 HIGH to Power Up [9]  
CE1 HIGH/CE2 LOW to Power Down [9]  
Byte Enable to Data Valid  
Byte Enable to Low-Z  
tPD  
10  
5
12  
6
tDBE  
tLZBE  
tHZBE  
Write Cycle [10, 11]  
tWC  
1
1
Byte Disable to High-Z  
5
6
Write Cycle Time  
10  
7
12  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tSCE  
CE1 LOW/CE2 HIGH to Write End  
Address Setup to Write End  
Address Hold from Write End  
Address Setup to Write Start  
WE Pulse Width  
tAW  
7
8
tHA  
0
0
tSA  
0
0
tPWE  
tSD  
7
8
Data Setup to Write End  
Data Hold from Write End  
WE HIGH to Low-Z [8]  
5.5  
0
6
tHD  
0
tLZWE  
tHZWE  
tBW  
3
3
WE LOW to High-Z [8]  
5
6
Byte Enable to End of Write  
7
8
Notes  
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified  
[5]  
I
/I and specified transmission line loads. Test conditions for the Read cycle use output loading shown in (a) of the “AC Test Loads and Waveforms ” on  
OL OH  
page 3, unless specified otherwise.  
7. This part has a voltage regulator that steps down the voltage from 3V to 2V internally. t  
time must be provided initially before a Read/Write operation is started.  
power  
[5]  
8.  
t
, t  
, t  
, t  
and t  
, t  
, t  
, t  
are specified with a load capacitance of 5 pF as in (b) of “AC Test Loads and Waveforms ” on page 3.  
HZOE HZCE HZWE HZBE  
LZOE LZCE \LZWE LZBE  
Transition is measured ±200 mV from steady-state voltage.  
9. These parameters are guaranteed by design and are not tested.  
10. The internal Write time of the memory is defined by the overlap of CE LOW (CE HIGH) and WE LOW. Chip enables must be active and WE and byte enables  
1
2
must be LOW to initiate a Write, and the transition of any of these signals can terminate the Write. The input data setup and hold timing should be referenced to  
the leading edge of the signal that terminates the Write.  
11. The minimum Write cycle time for Write Cycle No. 2 (WE controlled, OE LOW) is the sum of t  
and t  
.
SD  
HZWE  
Document #: 38-05256 Rev. *G  
Page 4 of 10  
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