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CY7C1041CV33-10ZC 参数 Datasheet PDF下载

CY7C1041CV33-10ZC图片预览
型号: CY7C1041CV33-10ZC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )静态RAM [4-Mbit (256K x 16) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 599 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1041CV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[2]
.... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage............. ...............................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Automotive-A
Automotive-E
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
V
CC
3.3V ± 0.3V
DC Electrical Characteristics
Over the Operating Range
-10
Parameter
V
OH
V
OL
V
IH
V
IL[2]
I
IX
Description
Test Conditions
Min. Max.
2.4
0.4
2.0
–0.3
GND < V
I
< V
CC
Com’l/Ind’l
Auto-A
Auto-E
I
OZ
Output Leakage
Current
GND < V
OUT
< V
CC
, Com’l/Ind’l
Output Disabled
Auto-A
Auto-E
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.,
f = f
MAX
= 1/t
RC
Com’l
Ind’l
Auto-A
Auto-E
I
SB1
Max. V
CC
,
Automatic CE
Com’l/Ind’l
Power-down Current CE > V
IH
Auto-A
—TTL Inputs
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Auto-E
Max. V
CC
,
Automatic CE
Com’l/Ind’l
Power-down Current CE > V
CC
– 0.3V,
Auto-A
—CMOS Inputs
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0 Auto-E
40
40
10
10
10
10
40
40
90
100
100
85
95
80
90
–1
–1
+1
+1
–1
+1
–1
+1
–1
–1
V
CC
+ 0.3
0.8
+1
+1
2.0
–0.3
–1
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
2.4
0.4
V
CC
+ 0.3
0.8
+1
2.0
–0.3
–1
-12
Min.
Max.
2.4
0.4
V
CC
+ 0.3
0.8
+1
2.0
–0.3
–1
–1
–20
–1
–1
–20
-15
Min.
Max.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
+20
+1
+1
+20
75
85
85
90
40
40
45
10
10
15
-20
Min.
Max. Unit
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
SB2
Capacitance
[3]
Parameter
C
IN
C
OUT
Description
Input Capacitance
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V
Max.
8
8
Unit
pF
pF
Notes:
2. V
IL
(min.) = –2.0V and V
IH
(max) = V
CC
+ 0.5V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05134 Rev. *H
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