CY7C006
CY7C016
Electrical Characteristics
(continued)
7C006-35
7C016-35
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
I
SB2
I
SB3
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
(Both Ports TTL Levels)
Standby Current
(One Port TTL Level)
Standby Current
(Both Ports CMOS
Levels)
Standby Current
(One Port CMOS Level)
GND
≤
V
I
≤
V
CC
Outputs Disabled, GND
≤
V
O
≤
V
CC
V
CC
= Max., I
OUT
= 0 mA
Com’l
Outputs Disabled
Ind
CE
L
and CE
R
≥
V
IH
,
f = f
MAX[5]
CE
L
or CE
R
≥
V
IH
,
f = f
MAX[5]
Both Ports
CE and CE
R
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V
or V
IN
≤
0.2V, f = 0
[5]
One Port
CE
L
or CE
R
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V or
V
IN
≤
0.2V, Active
Port Outputs, f = f
MAX[5]
Com’l
Ind
Com’l
Ind
Com’l
Ind
Com’l
Ind
–10
–10
150
150
30
30
80
80
3
3
70
70
Description
Output HIGH Voltage
Output LOW Voltage
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 4.0 mA
2.2
0.8
+10
+10
210
250
50
65
120
130
15
15
100
110
–10
–10
140
140
20
20
70
70
3
3
60
60
Min.
2.4
0.4
2.2
0.8
+10
+10
200
240
40
55
100
115
15
15
90
95
mA
mA
mA
mA
Typ.
Max.
2.4
0.4
7C006-55
7C016-55
Min. Typ.
Max. Unit
V
V
V
V
µA
µA
mA
I
SB4
Capacitance
[6]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
10
10
Unit
pF
pF
AC Test Loads and Waveforms
5V
R1=893Ω
OUTPUT
C = 30 pF
R2=347Ω
OUTPUT
C=30 pF
V
TH
=1.4V
(a) Normal Load (Load 1)
C006-5
5V
R1=893Ω
OUTPUT
C = 5 pF
R2=347Ω
R
TH
=250Ω
(b) Thévenin Equivalent
(Load)
C006-6
(c) Three-State Delay (Load 3)
C006-7
OUTPUT
C = 30 pF
3.0V
GND
10%
ALL INPUT PULSES
90%
90%
10%
≤
3 ns
C006-9
≤
3 ns
Load (Load 2)
C006-8
Note:
6. Tested initially and after any design or process changes that may affect these parameters.
5
CYPRESS [ CYPRESS SEMICONDUCTOR ]
