MoBL
®
CY62148EV30
Capacitance
(For All packages)
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
VFBGA
Package
72
8.86
TSOP II
Package
75.13
8.95
SOIC
Package
55
22
Unit
°C/W
°C/W
AC Test Loads and Waveforms
V
CC
OUTPUT
R1
V
CC
30 pF
INCLUDING
JIG AND
SCOPE
R2
GND
Rise Time = 1 V/ns
10%
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to:
THEVENIN
EQUIVALENT
OUTPUT
Parameters
R1
R2
R
TH
V
TH
2.50V
16667
15385
8000
1.20
R
TH
V
3.0V
1103
1554
645
1.75
Unit
Ω
Ω
Ω
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR [9]
t
CDR [10]
t
R [11]
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.5V, CE > V
CC
– 0.2V, Ind’l/Auto-A
V
IN
> V
CC
– 0.2V or V
IN
<
0.2V
0
t
RC
Conditions
Min
1.5
0.8
7
Typ
Max
Unit
V
μA
Chip Deselect to Data Retention Time
Operation Recovery Time
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
V
CC(min)
t
CDR
V
DR
> 1.5V
V
CC(min)
t
R
CE
Notes
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μs
or stable at V
CC(min)
> 100
μs.
Document #: 38-05576 Rev. *G
Page 4 of 12
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