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AM29F400BT-55SE 参数 Datasheet PDF下载

AM29F400BT-55SE图片预览
型号: AM29F400BT-55SE
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 256KX16, 55ns, PDSO44, MO-180AAA, SOP-44]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 43 页 / 860 K
品牌: CYPRESS [ CYPRESS ]
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D A T A S H E E T  
REVISION SUMMARY  
Revision A (August 1997)  
Revision C (January 1998)  
Initial release.  
Global  
Formatted for consistency with other 5.0 volt-only  
data sheets.  
Revision B (October 1997)  
Global  
AC Characteristics  
Added -55 and -60 speed options, deleted -65 speed  
option. Changed data sheet designation from Advance  
Information to Preliminary.  
Changed t and T  
to 15 ns for -55 speed option.  
FLQZ  
DF  
Revision C+1 (February 1998)  
Connection Diagrams  
Table 2, Top Boot Block Sector Address Table  
Corrected pinouts on all packages: deleted A18.  
Corrected the sector size for SA10 to 16 Kbytes/  
8 Kwords.  
Table 1, Device Bus Operations  
Revised to indicate inputs for both CE# and RESET#  
are required for standby mode.  
DC Characteristics—TTL/NMOS Compatible  
Deleted Note 4.  
Sector Protection/Unprotection  
Revision C+2 (April 1998)  
Corrected text to indicate that these functions can only  
be implemented using programming equipment.  
Distinctive Characteristics  
Changed minimum 100K write/erase cycles guaran-  
teed to 1,000,000.  
Program Command Sequence  
Changed to indicate Data# Polling is active for 2 µs  
after a program command sequence if the sector spec-  
ified is protected.  
Product Selector Guide, Ordering Information  
Added 55 ns 10ꢀ speed option.  
Sector Erase Command Sequence and DQ3: Sector  
Erase Timer  
AC Characteristics  
Word/Byte Configuration: Changed t  
for 55 ns device.  
specification  
FHQV  
Corrected sector erase timeout to 50 µs.  
Erase Suspend Command  
Erase/Program Operations: Changed t  
word  
WHWH1  
mode specification to 12 µs. Corrected the notes refer-  
ence for t and t . These parameters are  
Changed to indicate that the device suspends the  
erase operation a maximum of 20 µs after the rising  
edge of WE#.  
WHWH1  
WHWH2  
100ꢀ tested. Corrected the note reference for t  
This parameter is not 100ꢀ tested.  
.
VCS  
DC Characteristics  
Changed t and t specifications for 55 ns device.  
DS  
CP  
Changed to indicate V min and max values are 11.5  
ID  
to 12.5 V,with a V test condition of 5.0 V. Revised I  
Alternate CE# Controlled Erase/Program Operations:  
Changed t word mode specification to 12 µs.  
CC  
LIT  
to 50 µA. Added I  
specification. Added typical  
CC4  
WHWH1  
values to TTL/NMOS table. Revised CMOS typical  
standby current (I ).  
Corrected the notes reference for t  
These parameters are 100ꢀ tested.  
and t  
.
WHWH1  
WHWH2  
CC3  
Figure 14: Chip/Sector Erase Operation Timings;  
Figure 19: Alternate CE# Controlled Write  
Operation TImings  
Changed t and t specifications for 55 ns device.  
DS  
CP  
Temporary Sector Unprotect Table  
Added note reference for t  
100ꢀ tested.  
. This parameter is not  
VIDR  
Corrected hexadecimal values in address and data  
waveforms.  
Erase and Programming Performance  
AC Characteristics, Erase/Program Operations  
Changed minimum 100K program and erase cycles  
guaranteed to 1,000,000.  
Corrected t specification for -90 speed option to 45  
AH  
ns.  
Revision C+3 (June 1998)  
Erase and Programming Performance  
Corrected word and chip programming times.  
Distinctive Characteristics  
High Performance: Changed “Access times as fast as  
55 ns” to “Access times as fast as 45 ns”.  
November 11, 2009 21505E8  
Am29F400B  
39  
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