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CAT28C64BG-12T 参数 Datasheet PDF下载

CAT28C64BG-12T图片预览
型号: CAT28C64BG-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 64K位CMOS并行EEPROM [64K-Bit CMOS PARALLEL EEPROM]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 415 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT28C64B  
A.C. CHARACTERISTICS, Read Cycle  
VCC = 5V 10%, unless otherwise specified.  
28C64B-90  
28C64B-12  
28C64B-15  
Symbol Parameter  
Min.  
Max.  
Min.  
Max.  
Min. Max.  
Units  
ns  
tRC  
tCE  
tAA  
tOE  
Read Cycle Time  
90  
120  
150  
150  
150  
70  
0
CE Access Time  
90  
90  
50  
120  
120  
60  
ns  
Address Access Time  
OE Access Time  
ns  
ns  
(1)  
tLZ  
CE Low to Active Output  
OE Low to Active Output  
CE High to High-Z Output  
OE High to High-Z Output  
Output Hold from Address Change  
0
0
0
0
ns  
(1)  
tOLZ  
0
ns  
(1)(2)  
tHZ  
50  
50  
50  
50  
50  
50  
0
ns  
(1)(2)  
tOHZ  
ns  
(1)  
tOH  
0
0
ns  
Figure 1. A.C. Testing Input/Output Waveform(3)  
V
- 0.3V  
CC  
2.0 V  
0.8 V  
INPUT PULSE LEVELS  
REFERENCE POINTS  
0.0 V  
Figure 2. A.C. Testing Load Circuit (example)  
1.3V  
1N914  
3.3K  
DEVICE  
UNDER  
TEST  
OUT  
C
= 100 pF  
L
C
INCLUDES JIG CAPACITANCE  
L
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.  
(3) Input rise and fall times (10% and 90%) < 10 ns.  
Doc. No. 1011, Rev. F  
5