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CAT28C64BG-12T 参数 Datasheet PDF下载

CAT28C64BG-12T图片预览
型号: CAT28C64BG-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 64K位CMOS并行EEPROM [64K-Bit CMOS PARALLEL EEPROM]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 415 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT28C64B  
*COMMENT  
ABSOLUTE MAXIMUM RATINGS*  
Stresses above those listed under Absolute Maximum  
Ratingsmay cause permanent damage to the device.  
These are stress ratings only, and functional operation  
of the device at these or any other conditions outside of  
those listed in the operational sections of this specifica-  
tion is not implied. Exposure to any absolute maximum  
rating for extended periods may affect device perfor-  
mance and reliability.  
Temperature Under Bias ................. 55°C to +125°C  
Storage Temperature....................... 65°C to +150°C  
Voltage on Any Pin with  
Respect to Ground(2) ........... 2.0V to +VCC + 2.0V  
VCC with Respect to Ground ............... 2.0V to +7.0V  
Package Power Dissipation  
Capability (Ta = 25°C)................................... 1.0W  
Lead Soldering Temperature (10 secs) ............ 300°C  
Output Short Circuit Current(3) ........................ 100 mA  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Min.  
105  
Max.  
Units  
Cycles/Byte  
Years  
Test Method  
(1)  
NEND  
MIL-STD-883, Test Method 1033  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
(1)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-Up  
100  
(1)  
VZAP  
2000  
100  
Volts  
(1)(4)  
ILTH  
mA  
MODE SELECTION  
Mode  
CE  
WE  
OE  
L
I/O  
DOUT  
DIN  
Power  
ACTIVE  
ACTIVE  
ACTIVE  
STANDBY  
ACTIVE  
Read  
L
L
H
Byte Write (WE Controlled)  
Byte Write (CE Controlled)  
Standby, and Write Inhibit  
Read and Write Inhibit  
H
L
X
H
H
DIN  
H
X
X
High-Z  
High-Z  
H
CAPACITANCE T = 25°C, f = 1.0 MHz, V  
= 5V  
CC  
A
Symbol  
Test  
Max.  
10  
Units  
pF  
Conditions  
(1)  
CI/O  
Input/Output Capacitance  
Input Capacitance  
VI/O = 0V  
VIN = 0V  
(1)  
CIN  
6
pF  
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) The minimum DC input voltage is 0.5V. During transitions, inputs may undershoot to 2.0V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V +0.5V, which may overshoot to V +2.0V for periods of less than 20 ns.  
CC  
CC  
(3) Output shorted for no more than one second. No more than one output shorted at a time.  
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from 1V to V +1V.  
CC  
Doc. No. 1011, Rev. F  
3