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CAT25160VP2I-GT3 参数 Datasheet PDF下载

CAT25160VP2I-GT3图片预览
型号: CAT25160VP2I-GT3
PDF下载: 下载PDF文件 查看货源
内容描述: 8 KB和16 KB的SPI串行EEPROM CMOS [8-Kb and 16-Kb SPI Serial CMOS EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 17 页 / 254 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT25080, CAT25160  
WRITE OPERATIONS  
¯¯  
The CAT25080/160 device powers up into a write  
disable state. The device contains a Write Enable Latch  
(WEL) which must be set before attempting to write to  
the memory array or to the status register. In addition,  
the address of the memory location(s) to be written  
must be outside the protected area, as defined by BP0  
and BP1 bits from the status register.  
take the CS input high after the WREN instruction, as  
otherwise the Write Enable Latch will not be properly  
set. WREN timing is illustrated in Figure 2. The WREN  
instruction must be sent prior any WRITE or WRSR  
instruction.  
The internal write enable latch is reset by sending the  
WRDI instruction as shown in Figure 3. Disabling write  
operations by resetting the WEL bit, will protect the  
device against inadvertent writes.  
Write Enable and Write Disable  
The internal Write Enable Latch and the corresponding  
Status Register WEL bit are set by sending the WREN  
instruction to the CAT25080/160. Care must be taken to  
Figure 2. WREN Timing  
CS  
SCK  
1
1
0
SI  
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 3. WRDI Timing  
CS  
SCK  
SI  
1
0
0
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1122 Rev. A  
6
© 2006 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice