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AS8ERLC128K32QB 参数 Datasheet PDF下载

AS8ERLC128K32QB图片预览
型号: AS8ERLC128K32QB
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×32的耐辐射EEPROM可作为军用规格 [128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 551 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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PRELIMINARY  
SPECIFICATION  
EEPROM  
AS8ERLC128K32  
Austin Semiconductor, Inc.  
TOGGLE BIT  
This device provides another function to determine the internal programming cycle. If the EEPROM is set to read mode  
during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal pro-  
gramming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.  
TOGGLE BIT WAVEFORM  
4Next Mode  
Address  
3
tCE  
CE\  
WE\  
3
tOE  
OE\  
tOES  
tOEH  
1
2
2
Dout  
Dout  
Dout  
Din  
I/O6  
Dout  
tDW  
tWC  
NOTES:  
1) I/O6 beginning state is "1".  
2) I/O6 ending state will vary.  
3) See AC read characteristics.  
4) Any locations can be used, but the address must be fixed.  
SOFTWARE DATA PROTECTIONTIMINGWAVEFORM (In protection mode)  
VCC  
CE\  
WE\  
tBLC  
tBLC  
tBLC  
tWC  
Address  
5555  
AA  
AAAA or  
2AAA  
55  
5555  
A0  
Write Address*  
Write Data  
Data (each byte)  
* During this write cycle, data is physically written to the address provided.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8ERLC128K32  
Rev. 1.9 06/06  
9