PRELIMINARY
SPECIFICATION
EEPROM
AS8ERLC128K32
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55oC < TA < +125oC; Vcc = 3.3V +.3V)
SYMBOL
PARAMETER
MIN(2)
MAX
UNITS
t
Address Setup Time
Address Hold Time
0
ms
AS
t
150
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ms
ns
ns
µs
µs
AH
t
CE\ to Write Setup Time (WE\ controlled)
CE\ Hold Time (WE\ controlled)
WE\ to Write Setup Time (CE\ controlled)
WE\ to Hold Time (CE\ controlled)
OE\ to Write Setup Time
OE\ to Hold Time
CS
t
0
CH
t
0
WS
t
0
WH
t
0
OES
t
0
OEH
t
Data Setup Time
100
10
250
250
750
1
DS
t
Data Hold Time
DH
t
WE\ Pulse Width (WE\ controlled)
CE\ Pulse Width (CE\ controlled)
Data Latch Time
WP
t
CW
t
DL
t
Byte Load Cycle
30
BLC
t
Byte Load Window
100
BL
(3)
t
Write Cycle Time
15
WC
t
Time to Device Busy
150
DB
(4)
t
Write Start Time
250
DW
t
Reset Protect Time
100
2
RP
(5)
t
Reset High Time
RES
READ TIMING WAVEFORM
ADDRESS
CE\
tACC
tOH
tCE
OE\
tDF
tOE
VIH
WE\
HIGH-Z
DATAOUTVALID
Data Out
tRR
tDFR
RES\
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8ERLC128K32
Rev. 1.9 06/06
5