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AS8ERLC128K32QB 参数 Datasheet PDF下载

AS8ERLC128K32QB图片预览
型号: AS8ERLC128K32QB
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×32的耐辐射EEPROM可作为军用规格 [128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 551 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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PRELIMINARY  
SPECIFICATION  
EEPROM  
AS8ERLC128K32  
Austin Semiconductor, Inc.  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS  
(-55oC < TA < +125oC; Vcc = 3.3V +.3V)  
SYMBOL  
PARAMETER  
MIN(2)  
MAX  
UNITS  
t
Address Setup Time  
Address Hold Time  
0
ms  
AS  
t
150  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
ms  
ns  
ns  
µs  
µs  
AH  
t
CE\ to Write Setup Time (WE\ controlled)  
CE\ Hold Time (WE\ controlled)  
WE\ to Write Setup Time (CE\ controlled)  
WE\ to Hold Time (CE\ controlled)  
OE\ to Write Setup Time  
OE\ to Hold Time  
CS  
t
0
CH  
t
0
WS  
t
0
WH  
t
0
OES  
t
0
OEH  
t
Data Setup Time  
100  
10  
250  
250  
750  
1
DS  
t
Data Hold Time  
DH  
t
WE\ Pulse Width (WE\ controlled)  
CE\ Pulse Width (CE\ controlled)  
Data Latch Time  
WP  
t
CW  
t
DL  
t
Byte Load Cycle  
30  
BLC  
t
Byte Load Window  
100  
BL  
(3)  
t
Write Cycle Time  
15  
WC  
t
Time to Device Busy  
150  
DB  
(4)  
t
Write Start Time  
250  
DW  
t
Reset Protect Time  
100  
2
RP  
(5)  
t
Reset High Time  
RES  
READ TIMING WAVEFORM  
ADDRESS  
CE\  
tACC  
tOH  
tCE  
OE\  
tDF  
tOE  
VIH  
WE\  
HIGH-Z  
DATAOUTVALID  
Data Out  
tRR  
tDFR  
RES\  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8ERLC128K32  
Rev. 1.9 06/06  
5