SDRAM
AS4SD4M16
Austin Semiconductor, Inc.
AC FUNCTIONAL CHARACTERISTICS5, 6, 7, 8, 9, 11
(-55oC<TA<+125oC)
PARAMETER
SYMBOL
-8
-10
UNITS NOTES
READ/WRITE command to READ/WRITE command
tCCD
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
1
1
17
14
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
tCKED
tPED
tDQD
tDQM
tDQZ
tDWD
tDAL
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
1
0
0
2
0
4
2
1
1
2
2
3
2
14
17
DQM to data mask during WRITEs
17
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
17
17
A2 version
A2 version
15, 21
16, 21
17
Data-in to PRECHARGE command A1 version
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
tDPL
tBDL
tCDL
tRDL
tMRD
tROH
tROH
17
A2 version
16, 21
27
LOAD MODE REGISTER command to ACTIVE or REFRESH command
CL = 3
CL = 2
17
Data-out to high-impedance from PRECHARGE command
17
ELECTRICAL TIMING CHARACTERISTICS for -8 SPEED5, 6, 7, 8, 9, 11, 24
(-55oC<TA<+125oC)
-8
MIN
---
MAX
6
PARAMETER
SYM
tAC
UNITS
ns
NOTES
22
CL = 3
CL = 2
CL = 3
CL = 2
Access times from CLK (pos. edge)
---
8
9
ns
ns
22
22
22
22
22
21
---
---
tAC
tCK
---
---
---
---
---
---
Clock cycle time
12
20
24
80
2
ns
tCK
ACTIVE to READ or WRITE delay
PRECHARGE command period
ns
tRCD
tRP
tRCD
tWR
ns
AUTO REFRESH, ACTIVE command period
tCK
---
WRITE recovery time
A2 Version
3-2-3
100 MHz Speed Reference (CL -tRCD-tRP
)
CLKs
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD4M16
Rev. 2.1 6/05
32
AUSTIN [ AUSTIN SEMICONDUCTOR ]
