SDRAM
AS4SD4M16
Austin Semiconductor, Inc.
*Stresses greater than those listed as “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD/VDDQ Supply
Relative to VSS ........................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ........................................ -1V to +4.6V
Operating Temperature, TA (ambient)........-55°C to +125°C
Storage Temperature (plastic) ................-55°C to +150°C
Power Dissipation ................................................. 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6) (-55° ≤ ΤΑ ≤ +125 °C ; VDD/VDDQ =+3.3 V +0.3V)
PARAMETER/CONDITION
Supply Voltage
SYMBOL
MIN
3
MAX
3.6
UNITS
NOTES
VDD/VDD
Q
V
V
V
VIH
VDD +0.3
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
2.2
-0.5
23
23
VIL
0.7
INPUT LEAKAGE CURRENT
Any input 0V<VIN<VDD
II
-5
5
µΑ
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT (DQs are disabled; 0V<VOUT<VDDQ)
IOZ
µΑ
-5
5
VOH
2.4
--
V
OUTPUT LEVELS
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
--
0.4
V
IDD SPECIFICATIONS AND CONDITIONS1, 6, 11, 13 (-55°C<TA <+125 °C;VDD/VDDQ =+3.3 V +0.3V)
MAX
PARAMETER/CONDITIONS
SYM
-8
-10 UNITS NOTES
OPERATING CURRENT; Active Mode, Burst = 2,
READ or WRITE, tRC=tRC (MIN), CAS latency = 3,
3, 18,
19
120
110
2.5
40
mA
mA
mA
mA
IDD1
tCK = 10ns (15ns for -10)
STANDBY CURRENT: Power-Down Mode;
2.5
45
IDD2
IDD3
IDD4
All banks idle; CKE=LOW; tCK = 10ns (15ns for -10)
STANDBY CURRENT; Active Mode; CKE=HIGH,
CS\=HIGH; tCK = 10ns (15ns for -10),
3, 12,
19
All banks active after tRCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; tCK = 10ns (15ns for -10);
All banks active; CAS latency = 3
3, 18,
19
145
120
AUTO REFRESH CURRENT;
tRFC = tRFC (MIN); CL = 3
205
50
195
45
mA
mA
mA
IDD5
IDD6
IDD7
3, 12,
18, 19
CKE=HIGH; CS\=HIGH
tCK=10ns (15ns for -10)
tRFC = 15.625µs; CL = 3
SELF REFRESH CURRENT: CKE<0.2V (-40 to +85 only)
2.5
2.5
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD4M16
Rev. 2.1 6/05
30
AUSTIN [ AUSTIN SEMICONDUCTOR ]
