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AS4SD4M16DG-8/IT 参数 Datasheet PDF下载

AS4SD4M16DG-8/IT图片预览
型号: AS4SD4M16DG-8/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 4梅格×16 SDRAM同步动态随机存取存储 [4 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储动态存储器
文件页数/大小: 50 页 / 556 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD4M16  
Austin Semiconductor, Inc.  
with AUTO PRECHARGE. The disadvantage of the  
PRECHARGE command is that it requires that the command  
and address buses be available at the appropriate time to issue  
the command; the advantage of the PRECHARGE command is  
that it can be used to truncate fixed-length or full-page bursts.  
Full-page READ bursts can be truncated with the  
may be truncated with a BURST TERMINATE command,  
provided that AUTO PRECHARGE was not activated. The  
BURST TERMINATE command should be issued x cycles  
before the clock edge at which the last desired data element is  
valid, where x equals the CAS latency minus one. This is shown  
in Figure 12 for each possible CAS latency; data element n + 3  
is the last desired data element of a longer burst.  
BURST TERMINATE command, and fixed-length READ bursts  
T6  
T0  
T1  
T2  
T3  
T4  
T5  
CLK  
BURST  
TERMINATE  
NOP  
READ  
NOP  
NOP  
NOP  
NOP  
COMMAND  
X = 1 cycles  
BANK,  
COL n  
ADDRESS  
DQ  
DOUT  
n+1  
DOUT  
n+3  
DOUT  
n
DOUT  
n+2  
CAS Latency = 2  
T6  
T7  
T0  
T1  
T2  
T3  
T4  
T5  
CLK  
COMMAND  
ADDRESS  
DQ  
BURST  
NOP  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
TERMINATE  
X = 2 cycles  
BANK,  
COL n  
DOUT  
n+2  
DOUT  
n
DOUT  
n+1  
DOUT  
n+3  
CAS Latency = 3  
DON’T CARE  
NOTE: DQM is LOW.  
Figure 12  
TERMINATING A READ BURST  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD4M16  
Rev. 2.1 6/05  
18  
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