SDRAM
AS4SD4M16
Austin Semiconductor, Inc.
NOTE (continued):
8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the AUTO PRECHARGE command when its burst has been interrupted
by bank m’s burst.
9. Burst in bank n continues as initiated.
10. For a READ without AUTO PRECHARGE interrupted by a READ (with or without AUTO PRECHARGE), the READ to bank m
will interrupt the READ on bank n, CAS latency later (Figure 7).
11. For a READ without AUTO PRECHARGE interrupted by a WRITE (with or without AUTO PRECHARGE), the WRITE to bank
m will interrupt the READ on bank n when registered (Figures 9 and 10). DQM should be used one clock prior to the WRITE
command to prevent bus contention.
12. For a WRITE without AUTO PRECHARGE interrupted by a READ (with or without AUTO PRECHARGE), the READ to bank m
will interrupt the WRITE on bank n when registered (Figure 17), with the data-out appearing CAS latency later. The last valid WRITE
to bank n will be data-in registered one clock prior to the READ to bank m.
13. For a WRITE without AUTO PRECHARGE interrupted by a WRITE (with or without AUTO PRECHARGE), the WRITE to bank
m will interrupt the WRITE on bank n when registered (Figure 15). The last valid WRITE to bank n will be data-in registered one clock
prior to the READ to bank m.
14. For a READ with AUTO PRECHARGE interrupted by a READ (with or without AUTO PRECHARGE), the READ to bank m will
interrupt the READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered
(Figure 24).
15. For a READ with AUTO PRECHARGE interrupted by a WRITE (with or without AUTO PRECHARGE), the WRITE to bank m
will interrupt the READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus
contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Figure 25).
16. For a WRITE with AUTO PRECHARGE interrupted by a READ (with or without AUTO PRECHARGE), the READ to bank m
will interrupt the WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will
begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in
registered one clock prior to the READ to bank m (Figure 26).
17. For a WRITE with AUTO PRECHARGE interrupted by a WRITE (with or without AUTO PRECHARGE), the WRITE to bank m
will interrupt the WRITE on bank n when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when
the WRITE to bank m is registered. The last valid WRITE to bank n will be data registered one clock prior to the WRITE to bank m
(Figure 27).
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD4M16
Rev. 1.5 10/01
29
AUSTIN [ AUSTIN SEMICONDUCTOR ]
