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AS4SD2M32DGX-6XT 参数 Datasheet PDF下载

AS4SD2M32DGX-6XT图片预览
型号: AS4SD2M32DGX-6XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32× 4银行( 64 MB) SDRAM同步 [512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 52 页 / 1943 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD2M32  
Austin Semiconductor, Inc.  
WRITEs  
WRITE bursts are initiated with a WRITE command, as  
shown in Figure 13.  
Data for any WRITE burst may be truncated with a  
subsequent WRITE command, and data for a fixed-length  
WRITE burst may be immediately followed by data for a WRITE  
command. The new WRITE command can be issued on any  
clock following the previous WRITE command, and the data  
provided coincident with the new command applies to the new  
command. An example is shown in Figure 15. Data n+1 is either  
the last of a burst of two or the last desired of a longer burst.  
The 64Mb SDRAM uses a pipelined architecture and  
therefore does not require the 2n rule associated with a prefetch  
architecture. A WRITE command can be initiated on any clock  
cycle following a previous WRITE command. Full-speed ran-  
dom write accesses within a page can be performed to the same  
bank, as shown in Figure 16, or each subsequent WRITE may  
be preformed to a different bank.  
The starting column and blank addresses are provided with  
the WRITE command, an auto precharge is either enabled or  
disabled for that access. If auto precharge is enabled, the row  
being accessed is precharged at the completion of the burst.  
For the generic WRITE commands used in the following  
illustrations, auto precharge is disabled.  
During WRITE bursts, the first valid data-in element will  
be registered coincident with the WRITE command.  
Subsequent data elements will be registered on each  
successive positive clock edge. Upon completion of a fixed-  
length burst, assuming no other commands have been  
initiated, the DQs will be ignored (see Figure 14). A full-page  
burst will continue until terminated. (At the end of the page, it  
will wrap to the start address and continue.)  
FIGURE 14: WRITE Burst  
FIGURE 13: WRITE Command  
CLK  
CKE  
CS\  
RAS\  
CAS\  
WE\  
FIGURE 15: WRITE to WRITE  
A0-A9  
A10  
BA0, 1  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD2M32  
Rev. 1.0 1/08  
16  
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