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AS4LC4M16DG-6S/XT 参数 Datasheet PDF下载

AS4LC4M16DG-6S/XT图片预览
型号: AS4LC4M16DG-6S/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4 MEG ×16 DRAM [4 MEG x 16 DRAM]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 520 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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DRAM  
AS4LC4M16  
Austin Semiconductor, Inc.  
NOTES (Continued):  
35. VIH overshoot: VIH (MAX) - VCC + 2V for a pulse width £  
3ns, and the pulse width cannot be greater than one third of the  
cycle rate. VIL undershoot: VIL (MIN) = -2V for a pulse width £  
3ns, and the pulse width cannot be greater then one third of the  
cycle rate.  
36. NC pins are assumed to be left floating and are not tested for  
leakage.  
37. Self refresh and extended refresh for the device requires that  
at least 4,096 cycles be completed every 128ms.  
38. Self refresh version on IT temp parts only.  
AS4LC4M16  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 1.0 7/02  
12  
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