DRAM
AS4LC4M16
Austin Semiconductor, Inc.
AC ELECTRICAL CHARACTERISTICS (Continued)5,6,7,8,9,10,11,12
(VCC = +3.3V ±0.3V)
-5
-6
MAX UNITS NOTES
DESCRIPTION
SYMBOL MIN
MAX
MIN
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS\
20
25
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
34
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
47
56
34
50
60
RAS\ to column-address delay time
Row address hold time
9
7
12
10
60
15
RAS\ pulse width
50
50
80
84
11
0
10,000
10,000
RAS\ pulse width (EDO PAGE MODE)
RAS\ pulse width during Self Refresh
Random READ or WRITE cycle time
RAS\ to CAS\ delay time
125,000* 60 125,000*
80
104
14
0
14, 28
16, 30
28
tRCD
tRCH
tRCS
tREF
tREF
tRP
READ command hold time (referenced to CAS\)
READ command setup time
0
0
Refresh period
64/24**
100
64/24**
100
22, 23
23, 38
Refresh period ("S" version)
RAS\ precharge time
30
5
40
5
RAS\ to CAS\ precharge time
RAS\ precharge time exiting Self Refresh
READ command hold time (referenced to RAS\)
RAS\ hold time
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
90
0
105
0
16
35
13
116
67
13
2
15
140
79
15
2
READ-WRITE cycle time
RAS\ to WE\ delay time
18
WRITE command to RAS\ lead time
Transitioin time (rise or fall)
25
12
25
15
WRITE command hold time
8
10
45
0
35
tWCH
tWCR
tWCS
tWHZ
tWP
WRITE command hold time (referenced to RAS\)
WE\ command setup time
38
0
18, 28
WE\ to outputs in High-Z
WRITE command pulse width
WE\ pulse widths to disable outputs
WE\ hold time (CBR Refresh)
WE\ setup time (CBR Refresh)
5
10
8
5
10
10
10
tWPZ
tWRH
tWRP
8
NOTES:
*For XT Temp (-55°C to +125°C) tRASP (MAX) = 80,000ns for -5 and -6 speed.
**64ms Refresh for IT Temp, 24ms Refresh for XT Temp.
AS4LC4M16
Rev. 1.0 7/02
10
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
AUSTIN [ AUSTIN SEMICONDUCTOR ]
