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AS4DDR264M64PBG1R-38/ET 参数 Datasheet PDF下载

AS4DDR264M64PBG1R-38/ET图片预览
型号: AS4DDR264M64PBG1R-38/ET
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mx64 DDR2 SDRAM W /共享控制总线集成塑封微电路 [64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 28 页 / 243 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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i PEM
4.2 Gb SDRAM-DDR2
Gb
Austin Semiconductor, Inc.
AS4DDR264M64PBG1
BGA Locations
P6
C9,C10,D10,D11,T1,T2,
U2,U3
T8
V5
U5
U6
T9
G5,H1,M11,N7
F1,F2,P10,P11
H9,H10,M2,M3
H7,H11,M1,M5
E8,E9,R3,R4,T6
F10,F11,P1,P2
J2,J3,J4,J8,J9,J10,K2,
K3,K9,L2,L3,L4,L9,L10
J10
L8,K10,E5
C8,D1,D2,D7,D8,D9,E1,
E2,E3,E7,E10,E11,F3,
F4,F5,F7,F8,F9,G1,G2,
G3,G4,G7,G8,G9,G10,
G11,H2,H3,H4,H5,H8,
M4,M7,M8,M9,M10,N1,
N2,N3,N4,N5,N8,N9,
N10,N11,P3,P4,P5,P7,
P8,P9,R1,R2,R5,R9,
R10,R11,T3,T4,T5,
T10,T11,U4
K6
A2,A4,A5,A7,A8,A10,
B1,B11,H6,J1,J5,J7,J11,
K4,K8,L1,L5,L7,L11,M6,
V1,V11,W2,W4,W5,
W7,W8,W10
A3,A6,A9,A11,B2,B10,
C1,C11,G6,J6,K1,K5,
K7,K11,L6,N6,U1,U11,
V2,V10,W1,W3,W6,
W9,W11
B3,B4,B5,B6,B7,B8,B9,
C2,C3,C4,C5,C6,C7,D3,
D4,D5,D6,E4,E5,F6,R6,
R7,R8.T6,T7,U7,U8,U9,
U10,V3,V4,V6,V7,V8,V9
A1
Symbol
ODT
CKx, CKx\
CKE
CS\
RAS\
CAS\
WE\
UDMx
LDMx
UDQSx
UDQSx\
LDQSx
LDQSx\
Ax
RFU
BA0,BA1,BA2
DQx
Type
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
Input
Description
On-Die-Termination: Registered High enables on data bus termination
Differential input clocks, one set for each x16bits
Clock enable which activates all on silicon clocking circuitry
Chip Selects, one for each 16 bits of the data bus width
Command input which along with CAS\, WE\ and CS\ define operations
Command input which along with RAS\, WE\ and CS\ define operations
Command input which along with RAS\, CAS\ and CS\ define operations
One Data Mask cntl. for each upper 8 bits of a x16 word
One Data Mask cntl. For each lower 8 bits of a x16 word
Data Strobe input for upper byte of each x16 word
Differential input of UDQSx, only used when Differential DQS mode is enabled
Data Strobe input for lower byte of each x16 word
Differential input of LDQSx, only used when Differential DQS mode is enabled
Array Address inputs providing ROW addresses for Active commands, and
the column address and auto precharge bit (A10) for READ/WRITE commands
Future Input
Input
Bank Address inputs
Input/Output Data bidirectional input/Output pins
Vref
VCC
Supply
Supply
SSTL_18 Voltage Reference
Core Power Supply
VSS
Supply
Core Ground return
NC
No connection
UNPOPULATED
Unpopulated ball matrix location (location registration aid)
AS4DDR264M64PBG1
Rev. 0.5 06/08
Austin Semiconductor, Inc.
Austin, Texas
512.339.1188
www.austinsemiconductor.com
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