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AS4DDR264M64PBG1R-38/ET 参数 Datasheet PDF下载

AS4DDR264M64PBG1R-38/ET图片预览
型号: AS4DDR264M64PBG1R-38/ET
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mx64 DDR2 SDRAM W /共享控制总线集成塑封微电路 [64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 28 页 / 243 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第20页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第21页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第22页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第23页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第24页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第26页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第27页浏览型号AS4DDR264M64PBG1R-38/ET的Datasheet PDF文件第28页  
iPEM  
4.2 Gb SDRAM-DDR2  
Austin Semiconductor, Inc.  
AS4DDR264M64PBG1  
AC OPERATING SPECIFICATIONS (CONTINUED)  
-3  
-38  
-5  
333MHz/667Mbps 266MHz/533Mbps 200MHz/400Mbps  
Parameter  
Symbol  
tIPW  
MIN  
0.6  
MAX  
MIN  
0.6  
MAX  
MIN  
0.6  
MAX  
Units  
tCK  
ps  
Address and Control input puslse width for each input  
Address and Control input setup time  
tISJEDEC  
200  
250  
350  
tIHJEDEC  
Address and Control input hold time  
CAS\ to CAS\ command delay  
275  
2
375  
2
475  
2
ps  
tCK  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
ns  
tCCD  
tRC  
ACTIVE to ACTIVE command (same bank)  
ACTIVE bank a to ACTIVE bank b Command  
ACTIVE to READ or WRITE delay  
4-Bank activate period  
55  
10  
55  
10  
55  
10  
tRRD  
tRCD  
tFAW  
tRAS  
tRTP  
tWR  
15  
50  
15  
50  
15  
50  
ACTIVE to PRECHARGE  
Internal READ to PRECHARGE command delay  
WRITE recovery time  
40  
700001  
40  
700001  
40  
700001  
7.5  
15  
7.5  
15  
7.5  
15  
Auto PRECHARGE WRITE recovery+PRECHARGE time  
Internal WRITE to READ command delay  
PRECHARGE command period  
tDAL  
tWTR  
tRP  
tWR + tRP  
7.5  
15  
tWR + tRP  
7.5  
15  
tWR + tRP  
10  
15  
PRECHARGE ALL command period  
LOAD MODE, command Cycle time  
CKE LOW to CK, CK\ uncertainty  
tRPA  
tMRD  
tDELAY  
tRP+tCL  
2
tRP+tCL  
2
tRP+tCL  
2
tIS + tCL + tIH  
tIS + tCL + tIH  
tIS + tCL + tIH  
REFRESH to ACTIVE or REFRESH to REFRESH  
command Interval  
70000 1  
70000 1  
70000 1  
tRFC  
127  
127  
127  
ns  
tREFIIT  
tREFIET  
tREFIXT  
Average periodic REFRESH interval [Industrial temp]  
7.8  
5.9  
3.9  
7.8  
5.9  
3.9  
7.8  
5.9  
3.9  
us  
us  
us  
Average periodic REFRESH interval [Enhanced temp]  
Average periodic REFRESH interval [Extended temp]  
Exit SELF REFRESH to non READ command  
tRFC(min)+  
10  
tRFC(min)+  
10  
tRFC(min)+  
10  
tXSNR  
tXSRD  
tISXR  
ns  
tCK  
ps  
Exit SELF REFRESH to READ command  
Exit SELF REFRESH timing reference  
200  
tIS  
200  
tIS  
200  
tIS  
ODT turn-on delay  
ODT turn-on delay  
ODT turn-off delay  
ODT turn-off delay  
tAOND  
tAOND  
tAOPD  
tAOF  
2
2
2
2
2
2
tCK  
ps  
tAC(max)+  
700  
tAC(max)+  
1000  
tAC(max)+  
1000  
tAC(min)  
tAC(min)  
tAC(min)  
2.5  
2.5  
tAC(max)+  
600  
2.5  
2.5  
tAC(max)+  
600  
2.5  
2.5  
tAC(max)+  
600  
tCK  
ps  
tAC(min)  
tAC(min)  
tAC(min)  
2 x tCK +  
tAC(max)+  
1000  
2 x tCK +  
tAC(max)+  
1000  
2 x tCK +  
tAC(max)+  
1000  
tAC(min) +  
2000  
tAC(min) +  
2000  
tAC(min) +  
2000  
ODT turn-on (power-down mode)  
ODT turn-off (power-down mode)  
tAONPD  
tAOFPD  
ps  
ps  
2.5 x tCK +  
tAC(max)+  
1000  
2.5 x tCK +  
tAC(max)+  
1000  
2.5 x tCK +  
tAC(max)+  
1000  
tAC(min) +  
2000  
tAC(min) +  
2000  
tAC(min) +  
2000  
ODT to power-down entry latency  
ODT power-down exit latency  
ODT enable from MRS command  
tANPD  
tAXPD  
tMOD  
tXARD  
tSARDS  
tXP  
3
8
3
8
3
8
tCK  
tCK  
ns  
12  
2
12  
2
12  
2
Exit active POWER-DOWN to READ command, MR[12]=0  
Exit active POWER-DOWN to READ command, MR[12]=1  
Exit PRECHARGE POWER-DOWN to any non READ  
CKE Min. HIGH/LOW time  
tCK  
tCK  
tCK  
tCK  
7 - AL  
2
6 - AL  
2
6 - AL  
2
tCLE  
3
3
3
o
Note 1: Max value reduced to 10,000ns at 125 C  
Austin Semiconductor, Inc.  
Austin, Texas 512.339.1188 www.austinsemiconductor.com  
AS4DDR264M64PBG1  
Rev. 0.5 06/08  
25  
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