iPEM
4.2 Gb SDRAM-DDR2
Austin Semiconductor, Inc.
AS4DDR264M64PBG1
AC OPERATING SPECIFICATIONS
-3
-38
-5
333MHz/667Mbps 266MHz/533Mbps 200MHz/400Mbps
Parameter
Symbol
tCKAVG
tCKAVG
tCKAVG
tCHAVG
tCLAVG
MIN
3
MAX
8
MIN
MAX
MIN
MAX
Units
ns
Clock Cycle Time
Clock High Time
CL=5
CL=4
CL=3
3.75
5
8
3.75
5
8
5
5
8
ns
8
8
8
ns
0.48
0.52
0.52
0.48
0.52
0.52
0.48
0.52
0.52
tCK
Clock Low Time
0.48
tCH,tCL
-125
0.48
tCH,tCL
-125
0.48
tCH,tCL
-125
tCK
ps
Half Clock Period
Clock Jitter - Period
Min of
tHP
tJITPER
125
125
125
125
125
150
ps
tJIT DUTY
tJITCC
Clock Jitter - Half Period
-125
-125
-150
ps
ps
ps
ps
ps
ps
Clock Jitter - Cycle to Cycle
250
250
250
tERR2PER
tERR4PER
tERR10PER
tERR50PER
Cumulative Jitter error, 2 Cycles
Cumulative Jitter error, 4 Cycles
Cumulative Jitter error, 6-10 Cycles
Cumulative Jitter error, 11-50 Cycles
-175
-250
-350
-450
175
250
350
450
-175
-250
-350
-450
175
250
350
450
-175
-250
-350
-450
175
250
350
450
DQ hold skew factor
tQHS
tAC
-
340
450
-
400
500
-
450
600
ps
ps
ps
ps
DQ output access time from CK/CK\
Data-out High-Z window from CK/CK\
DQS Low-Z window from CL/CK\
-450
-500
-600
tHZ
tAC(MAX)
tAC(MAX)
tAC(MAX)
tLZ1
tAC(MIN)
tAC(MAX)
tAC(MIN)
tAC(MAX)
tAC(MIN)
tAC(MAX)
tLZ2
DQ Low-Z window from CK/CK\
2*tAC(MIN) tAC(MAX) 2*tAC(MIN) tAC(MAX) 2*tAC(MIN) tAC(MAX)
ps
ps
ps
tDSJEDEC
tDHJEDEC
DQ and DM input setup time relative to DQS
DQ and DM input hold time relative to DQS
100
175
0.35
100
225
0.35
150
275
0.35
DQ and DM input pulse width (for each input)
Data Hold skew factor
tDIPW
tQHS
tCK
ps
340
400
400
400
450
450
DQ-DQS Hold, DQS to first DQ to go non valid, per access
Data valid output window (DVW)
tQH
tHP-tQHS
tQH-tDQSQ
0.35
tHP-tQHS
tQH-tDQSQ
0.35
tHP-tQHS
tQH-tDQSQ
0.35
ps
tDVW
ps
DQS input-high pulse width
tDQSH
tDQSL
tDQSCK
tDSS
tCK
tCK
ps
DQS input-low pulse width
0.35
0.35
0.35
DQS output access time from CK/CK\
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising-hold time
DQS-DQ skew, DQS to last DQ valid, per group, per access
DQS READ preamble
-400
-400
-450
0.2
0.2
0.2
tCK
tCK
ps
tDSH
0.2
0.2
0.2
tDQSQ
tRPRE
tRPST
tWPRES
tWPRE
tWPST
tDQSS
240
1.1
0.6
300
1.1
0.6
350
1.1
0.6
0.9
0.4
0.9
0.4
0.9
0.4
tCK
tCK
ps
DQS READ postamble
WRITE preamble setup time
0
0
0
DQS WRITE preamble
0.35
0.4
0.35
0.4
0.35
0.4
tCK
tCK
tCK
tCK
DQS WRITE postamble
0.6
0.6
0.6
Positive DQS latching edge to associated Clock edge
WRITE command to first DQS latching transition
-0.25
0.25
-0.25
0.25
-0.25
0.25
WL-tDQSS WL+tDQSS WL-tDQSS WL+tDQSS WL-tDQSS WL+tDQSS
Austin Semiconductor, Inc.
● Austin, Texas ● 512.339.1188 ● www.austinsemiconductor.com
AS4DDR264M64PBG1
Rev. 0.5 06/08
24