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AS4DDR16M72PBG 参数 Datasheet PDF下载

AS4DDR16M72PBG图片预览
型号: AS4DDR16M72PBG
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mx72 DDR SDRAM集成塑封微电路 [16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 19 页 / 358 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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iPEM  
1.2 Gb SDRAM-DDR  
AS4DDR16M72PBG  
Austin Semiconductor, Inc.  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Unit  
Voltage on VCC, VCCQ Supply relative to VSS  
-1 ot 3.6  
V
Voltage on I/O pins relative to VSS  
Operating Temperature TA (Mil)  
Operating Temperature TA (Ind)  
Storage Temperature, Plastic  
-1 ot 3.6  
V
oC  
oC  
-55 to +125  
-40 to +85  
-55 to +150  
oC  
Note: Stress greater than those listed under "Absolute Maximum Ratings" may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions greater than those indicated in the  
operational conditions for extended periods may affect reliability.  
CAPACITANCE (NOTE 13)  
Parameter  
Symbol  
C11  
Max  
8
Unit  
pF  
Input Capacitance: CLK  
Addresses, BA0-1 Input Capacitance  
Input Capacitance: All other input-only pins  
CA  
30  
9
pF  
C12  
pF  
C10  
Input/Output Capacitance: I/O's  
12  
pF  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4DDR16M72PBG  
Rev. 2.1 06/09  
11  
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