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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
Table 6: System Interface String  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
V
V
V
V
CC Min. (write/erase) D7-D4:volt, D3-D0: 100 millivolt  
CC Max. (write/erase) D7-D4:volt, D3-D0:100 millivolt  
PP Min. voltage (00h=no VPP pin present)  
1Bh  
1Ch  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
36h  
38h  
3Ah  
3Ch  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0027h  
0036h  
0000h  
0000h  
0003h  
0000h  
0009h  
0000h  
0005h  
0000h  
0004h  
0000h  
PP Max. voltage (00h=no VPP pin present)  
Typical timeout per single byte/word write 2N µs  
Typical timeout for Min. size buffer write 2N µs (00h=not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h=not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h=not supported)  
Table 7: Device Geometry Definition  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
0015h  
0002h  
0000h  
0000h  
0000h  
0004h  
0000h  
0000h  
0040h  
0000h  
0001h  
0000h  
0020h  
0000h  
0000h  
0000h  
0080h  
0000h  
001Eh  
0000h  
0000h  
0001h  
Description  
27h  
28h  
29h  
2Ah  
2Bh  
2Ch  
2Dh  
2Eh  
2Fh  
30h  
31h  
32h  
33h  
34h  
35h  
36h  
37h  
38h  
39h  
3Ah  
3Bh  
3Ch  
4Eh  
50h  
52h  
54h  
56h  
58h  
5Ah  
5Ch  
5Eh  
60h  
62h  
64h  
66h  
68h  
6Ah  
6Ch  
6Eh  
70h  
72h  
74h  
76h  
78h  
Device Size = 2N Byte  
Flash Device Interface description (refer to CFI publication 100)  
Max. number of byte in multi-byte write = 2N (00h= not supported)  
Number of Erase Block Regions within device  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
Erase Block Region 2 Information  
Erase Block Region 3 Information  
Erase Block Region 4 Information  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
15  
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