ATmega16M1/32M1/32C1/64M1/64C1 Automotive
1.4
ADC Characteristics in Differential Mode (Continued)
TA = –40°C to +150°C, VCC = 4.5V to 5.5V (unless otherwise noted)
Parameters
Test Conditions
Symbol
Min
Typ
Max
Unit
Gain = 5x, 10x, VCC = 5V,
VRef = 2.56V,
1.5
3.5
ADC clock = 2 MHz
Gain = 20x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
Absolute accuracy
TUE
1.5
1.5
0.1
0.2
0.7
0.1
0.2
0.3
4.0
6.0
LSB
Gain = 40x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
Gain = 5x, 10x, VCC = 5V,
VRef = 2.56V,
1.5
ADC clock = 2 MHz
Gain = 20x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
Integral Non Linearity
INL
2.5
LSB
Gain = 40x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
4.5
Gain = 5x, 10x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
1.5
Gain = 20x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
Differential Non Linearity
DNL
2.0
LSB
Gain = 40x, VCC = 5V,
VRef = 2.56V,
4.0
ADC clock = 2 MHz
Gain = 5x, 10x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
–3.0
–3.0
–3.0
+3.0
+3.0
+3.0
Gain error
LSB
Gain = 20x, 40x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
Gain = 5x, 10x, VCC = 5V,
VRef = 2.56V,
ADC clock = 2 MHz
Offset error
LSB
V
Gain = 20x, 40x, VCC = 5V,
VRef = 2.56V,
–4.0
2.56
+4.0
ADC clock = 2 MHz
Reference voltage
VREF
AVCC – 0.5
1.5
Memory Endurance
EEPROM endurance: 50,000 Write/Erase cycles.
Flash endurance: 10,000 Write/Erase cycles.
5
7781D–AVR–01/10
ATMEL [ ATMEL ]
