欢迎访问ic37.com |
会员登录 免费注册
发布采购

ATMEGA48PA-AU 参数 Datasheet PDF下载

ATMEGA48PA-AU图片预览
型号: ATMEGA48PA-AU
PDF下载: 下载PDF文件 查看货源
内容描述: 8位微控制器与4/8/ 16 / 32K字节的系统内可编程闪存 [8-bit Microcontroller with 4/8/16/32K Bytes In-System Programmable Flash]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 448 页 / 12817 K
品牌: ATMEL [ ATMEL ]
 浏览型号ATMEGA48PA-AU的Datasheet PDF文件第298页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第299页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第300页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第301页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第303页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第304页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第305页浏览型号ATMEGA48PA-AU的Datasheet PDF文件第306页  
ATmega48PA/88PA/168PA/328P  
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been  
applied to ensure the Prog_enable Signature has been latched.  
5. Wait until VCC actually reaches 4.5 -5.5V before giving any parallel programming  
commands.  
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.  
27.7.2  
Considerations for Efficient Programming  
The loaded command and address are retained in the device during programming. For efficient  
programming, the following should be considered.  
• The command needs only be loaded once when writing or reading multiple memory locations.  
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the  
EESAVE Fuse is programmed) and Flash after a Chip Erase.  
• Address high byte needs only be loaded before programming or reading a new 256 word  
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes  
reading.  
27.7.3  
Chip Erase  
The Chip Erase will erase the Flash and EEPROM(1) memories plus Lock bits. The Lock bits are  
not reset until the program memory has been completely erased. The Fuse bits are not  
changed. A Chip Erase must be performed before the Flash and/or EEPROM are  
reprogrammed.  
Note:  
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.  
Load Command “Chip Erase”  
1. Set XA1, XA0 to “10”. This enables command loading.  
2. Set BS1 to “0”.  
3. Set DATA to “1000 0000”. This is the command for Chip Erase.  
4. Give XTAL1 a positive pulse. This loads the command.  
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.  
6. Wait until RDY/BSY goes high before loading a new command.  
27.7.4  
Programming the Flash  
The Flash is organized in pages, see Table 27-11 on page 299. When programming the Flash,  
the program data is latched into a page buffer. This allows one page of program data to be pro-  
grammed simultaneously. The following procedure describes how to program the entire Flash  
memory:  
A. Load Command “Write Flash”  
1. Set XA1, XA0 to “10”. This enables command loading.  
2. Set BS1 to “0”.  
3. Set DATA to “0001 0000”. This is the command for Write Flash.  
4. Give XTAL1 a positive pulse. This loads the command.  
B. Load Address Low byte  
1. Set XA1, XA0 to “00”. This enables address loading.  
2. Set BS1 to “0”. This selects low address.  
3. Set DATA = Address low byte (0x00 - 0xFF).  
302  
8161D–AVR–10/09  
 复制成功!