ATmega8(L)
Figure 106. Programming the Flash Waveforms(1)
F
A
B
C
D
E
B
C
D
E
G
H
0x10
ADDR. LOW DATA LOW DATA HIGH
ADDR. LOW DATA LOW
DATA HIGH
XX
ADDR. HIGH
XX
XX
DATA
XA1
XA0
BS1
XTAL1
WR
RDY/BSY
RESET +12V
OE
PAGEL
BS2
Note:
1. “XX” is don’t care. The letters refer to the programming description above.
Programming the EEPROM
The EEPROM is organized in pages, see Table 94 on page 224. When programming
the EEPROM, the program data is latched into a page buffer. This allows one page of
data to be programmed simultaneously. The programming algorithm for the EEPROM
Data memory is as follows (refer to “Programming the Flash” on page 225 for details on
Command, Address and Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High byte (0x00 - 0xFF).
3. B: Load Address Low byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
5. E: Latch data (give PAGEL a positive pulse).
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page.
1. Set BS1 to “0”.
2. Give WR a negative pulse. This starts programming of the EEPROM page.
RDY/BSY goes low.
3. Wait until to RDY/BSY goes high before programming the next page.
(See Figure 107 for signal waveforms).
227
2486M–AVR–12/03
ATMEL [ ATMEL ]
