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ATMEGA8L-8MUR 参数 Datasheet PDF下载

ATMEGA8L-8MUR图片预览
型号: ATMEGA8L-8MUR
PDF下载: 下载PDF文件 查看货源
内容描述: 8位爱特梅尔带有8K字节的系统内可编程闪存 [8-bit Atmel with 8KBytes In-System PRogrammable Flash]
分类和应用: 闪存微控制器和处理器外围集成电路异步传输模式PCATM时钟
文件页数/大小: 331 页 / 6705 K
品牌: ATMEL [ ATMEL ]
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ATmega8(L)  
Integral Non-linearity (INL): After adjusting for offset and gain error, the INL is the maximum  
deviation of an actual transition compared to an ideal transition for any code. Ideal value: 0  
LSB  
Figure 99. Integral Non-linearity (INL)  
Output Code  
Ideal ADC  
Actual ADC  
V
Input Voltage  
REF  
Differential Non-linearity (DNL): The maximum deviation of the actual code width (the  
interval between two adjacent transitions) from the ideal code width (1 LSB). Ideal value: 0  
LSB.  
Figure 100. Differential Non-linearity (DNL)  
Output Code  
0x3FF  
1 LSB  
DNL  
0x000  
0
VREF Input Voltage  
Quantization Error: Due to the quantization of the input voltage into a finite number of codes,  
a range of input voltages (1 LSB wide) will code to the same value. Always 0.5 LSB.  
Absolute accuracy: The maximum deviation of an actual (unadjusted) transition compared to  
an ideal transition for any code. This is the compound effect of offset, gain error, differential  
error, non-linearity, and quantization error. Ideal value: 0.5 LSB.  
198  
2486AA–AVR–02/2013  
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