M65608E
Data Retention Characteristics
Parameter
Description
Minimum
2.0
Typical
TA = 25
⋅C
–
Maximum
–
Unit
V
VCCDR
V
CC
for data
retention
Chip
deselect to
data
retention
time
Operation
recovery
time
Data
retention
current at
2.0V
Data
retention
current at
3.0V
TCDR
0.0
–
–
ns
TR
TAVAV
(1)
–
–
ns
ICCDR1
–
0.1
150
µA
ICCDR2
(2)
Notes:
–
0.2
200
µA
1. TAVAV = Read Cycle Time
2. CS1 =
V
CC
or CS2 = CS1 = GND, Vin = GND/
V
CC
, this parameter is only tested at
V
CC
= 2V.
3. Parameters guaranteed but not tested
Write Cycle
Symbol
Parameter
65608-30
30
0
22
18
22
22
8
22
0
0
0
65608-45
45
0
35
20
35
35
15
35
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Value
min
min
min
min
min
min
max
min
min
min
min
TAVAW
TAVWL
TAVWH
TDVWH
TE1LWH
TE2HWH
TWLQZ
TWLWH
TWHAX
TWHDX
TWHQX
Note:
Write cycle time
Address set-up time
Address valid to end of
write
Data set-up time
CS1 low to write end
CS2 high to write end
Write low to high Z
(1)
Write pulse width
Address hold from to
end of write
Data hold time
Write high to low Z
(1)
1. Parameters guaranteed, not tested, with output loading 5 pF.
7
4151N–AERO–04/09
ATMEL [ ATMEL CORPORATION ]
