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930104704 参数 Datasheet PDF下载

930104704图片预览
型号: 930104704
PDF下载: 下载PDF文件 查看货源
内容描述: 弧度。宽容128Kx8 , 5伏超低功耗CMOS SRAM [Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管异步传输模式ATM
文件页数/大小: 16 页 / 793 K
品牌: ATMEL [ ATMEL ]
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AC Parameters  
AC Test Conditions  
Input Pulse Levels:....................................GND to 3.0V  
Input Rise/Fall Times: ...............................5 ns  
Input Timing Reference Levels: ................1.5V  
Output loading IOL/IOH (see Figure 1 and Figure 2)+30 pF  
AC Test Loads Waveforms  
Figure 1  
Figure 2  
Figure 3  
Data Retention Mode  
Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and sup-  
ply current are guaranteed over temperature. The following rules ensure data retention:  
1. During data retention chip select CS1 must be held high within VCC to VCC -0.2V or,  
chip select CS2 must be held down within GND to GND +0.2V.  
2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, mini-  
mizing power dissipation.  
3. During power up and power-down transitions CS1 and OE must be kept between VCC +  
0.3V and 70% of VCC, or with CS2 between GND and GND -0.3V.  
4. The RAM can begin operation > TR ns after VCC reaches the minimum operation volt-  
ages (4.5V).  
Timing  
6
M65608E  
4151N–AERO–04/09  
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