AT89C5132
7. Program/Code Memory
The AT89C5132 implements 64K Bytes of on-chip program/code memory. Figure 7-1 shows the
split of internal and external program/code memory spaces depending on the product.
The Flash memory increases EPROM and ROM functionality by in-circuit electrical erasure and
programming. The high voltage needed for programming or erasing Flash cells is generated on-
chip using the standard VDD voltage, made possible by the internal charge pump. Thus, the
AT89C5132 can be programmed using only one voltage and allows in application software pro-
gramming. Hardware programming mode is also available using common programming tools.
See the application note ‘Programming T89C51x and AT89C51x with Device Programmers’.
The AT89C5132 implements an additional 4K Bytes of on-chip boot Flash memory provided in
Flash memory. This boot memory is delivered programmed with a standard bootloader software
allowing In-System Programming (ISP). It also contains some Application Programming Inter-
faces (API), allowing In Application Programming (IAP) by using user’s own bootloader.
Figure 7-1. Program/Code Memory Organization
FFFFh
F000h
FFFFh
F000h
4K Bytes
Boot Flash
64K Bytes
Code Flash
0000h
7.1
Flash Memory Architecture
As shown in Figure 7-2 the AT89C5132 Flash memory is composed of four spaces detailed in
the following paragraphs.
Figure 7-2. AT89C5132 Memory Architecture
Hardware Security
Extra Row
FFFFh
FFFFh
4K Bytes
Flash Memory
Boot
F000h
64K Bytes
User
Flash Memory
0000h
17
4173E–USB–09/07
ATMEL [ ATMEL ]
