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APW8713 参数 Datasheet PDF下载

APW8713图片预览
型号: APW8713
PDF下载: 下载PDF文件 查看货源
内容描述: 高输入电压8A PWM变换器中,ADJ 。软启动 [High Input Voltage 8A PWM Converter With Adj. Soft Start]
分类和应用: 软启动
文件页数/大小: 24 页 / 801 K
品牌: ANPEC [ ANPEC ELECTRONICS COROPRATION ]
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APW8713  
Application Information (Cont.)  
Input Capacitor Selection  
Layout Consideration  
The input capacitor is chosen based on the voltage rating  
and the RMS current rating. For reliable operation, select-  
ing the capacitor voltage rating to be at least 1.3 times  
higher than the maximum input voltage. The maximum  
RMS current rating requirement is approximately IOUT/2,  
where IOUT is the load current. During power-up, the input  
capacitors have to handle great amount of surge current.  
For low-duty notebook applications, ceramic capacitor is  
recommended. The capacitors must be connected be-  
tween the drain of high-side MOSFET and the source of  
low-side MOSFET with very low-impedance PCB layout.  
In any high switching frequency converter, a correct lay-  
out is important to ensure proper operation of the  
regulator. With power devices switching at higher  
frequency, the resulting current transient will cause volt-  
age spike across the interconnecting impedance and  
parasitic circuit elements. As an example, consider the  
turn-off transition of the PWM MOSFET. Before turn-off  
condition, the MOSFET is carrying the full load current.  
During turn-off, current stops flowing in the MOSFET and  
is freewheeling by the low side MOSFET and parasitic  
diode. Any parasitic inductance of the circuit generates a  
large voltage spike during the switching interval. In  
general, using short and wide printed circuit traces should  
minimize interconnecting impedances and the magni-  
tude of voltage spike. Besides, signal and power grounds  
are to be kept separate and finally combined using ground  
plane construction or single point grounding. The best  
tie-point between the signal ground and the power ground  
is at the negative side of the output capacitor on each  
channel, where there is less noise. Noisy traces beneath  
the IC are not recommended. Below is a checklist for  
your layout:  
Thermal Consideration  
Because the APW8802 build-in high-side and low-side  
MOSFET, the heat dissipated may exceed the maximum  
junction temperature of the part in applications. If the junc-  
tion temperature reaches approximately 150oC, both  
power switches will be turned off and the LX node will  
become high impedance. To avoid the APW8713 from  
exceeding the maximum junction temperature, the user  
will need to do some thermal analysis. The goal of the  
thermal analysis is to determine whether the power dis-  
sipated exceeds the maximum junction temperature of  
the part. The main power dissipated by the part is  
approximated:  
- Keep the switching nodes (BOOT and LX) away from  
sensitive small signal nodes since these nodes are  
fast moving signals. Therefore, keep traces to these  
nodes as short as possible and there should be no  
other weak signal traces in parallel with theses traces  
on any layer.  
PUPPER = IO2 UT(1+ TC)(RDS(ON))D + 0.5(IOUT)(V )(tSW )FSW  
IN  
= IO2 UT(1+ TC)(RDS(ON))(1-D)  
- The large layout plane between the drain of the MOSFETs  
(VIN and LX nodes) can get better heat sinking.  
- The current sense resistor should be close to OCSET  
pin to avoid parasitic capacitor effect and noise coupling.  
- Decoupling capacitors, the resistor-divider, and boot  
capacitor should be close to their pins.  
P
LOWER  
IOUT is the load current  
TC is the temperature dependency of RDS(ON)  
FSW is the switching frequency  
tSW is the switching interval  
- The output bulk capacitors should be close to the loads.  
The input capacitor’s ground should be close to the  
grounds of the output capacitors.  
D is the duty cycle  
Note that both internal MOSFETs have conduction losses  
while the upper MOSFET include an additional transition  
loss. The switching internal, tSW, is the function of the  
reverse transfer capacitance CRSS. The (1+TC) term fac-  
tors in the temperature dependency of the RDS(ON) and can  
be extracted from the "RDS(ON) vs. Temperature" curve  
of the power MOSFET. In APW8713 case, the RDS(ON) is  
about 30mW from specification table.  
- Locate the resistor-divider close to the FB pin to mini-  
mize the high impedance trace. In addition, FB pin traces  
can’t be close to the switching signal traces (BOOT and  
LX).  
Copyright ã ANPEC Electronics Corp.  
18  
www.anpec.com.tw  
Rev. A.3 - Sep., 2013  
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