APM2103SG
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
10
VGS = -4.5V
IDS = -2.5A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 88mW
0.2
-50 -25
0.1
0.0
0
25 50 75 100 125 150
0.3
0.6
0.9
1.2
1.5
1.8
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
500
450
400
350
300
250
200
150
100
50
Frequency=1MHz
VDS= -10V
IDS= -2.5A
Ciss
Coss
Crss
0
0
1
2
3
4
5
6
7
0
4
8
12
16
20
QG -Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
6
www.anpec.com.tw
Rev. A.1 - Jun., 2006
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
