APM2103SG
Absolute Maximum Ratings
(TA = 25°C unless otherwise noted)
Symbol
VDSS
Parameter
Rating
-20
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
VGSS
±12
*
ID
-2.5
A
A
VGS=-4.5V
*
IDM
-10
300ms Pulsed Drain Current
*
IS
-1.3
150
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
TJ
°C
TSTG
-55 to 150
TA =25°C
1.14
0.45
*
W
PD
Maximum Power Dissipation
TA =100°C
*
RqJA
Thermal Resistance-Junction to Ambient
°C/W
110
Notes: *Surface Mounted on 1in2 pad area, t £ 5sec.
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
APM2103SG
Symbol
Parameter
Test Condition
Unit
Min.
Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-20
V
VGS=0V, IDS=250mA
VDS=-16V, VGS=0V
TJ=85°C
-1
IDSS
Zero Gate Voltage Drain Current
mA
-30
VGS(th)
IGSS
-0.5
-0.7
-1
V
Gate Threshold Voltage
Gate Leakage Current
VDS= VGS, IDS=-250mA
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-2.5A
±10
110
160
260
-1.3
mA
88
a
RDS(ON)
Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A
VGS=-1.8V, IDS=-1A
120
160
-0.8
mW
a
VSD
ISD=-1.3A, VGS=0V
V
Diode Forward Voltage
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5.8
1.3
1.1
8
VDS=-10V, VGS=-4.5V,
IDS=-2.5A
nC
Copyright ã ANPEC Electronics Corp.
2
www.anpec.com.tw
Rev. A.1 - Jun., 2006
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
