AWT6631
Tableꢀ5:ꢀElectricalꢀSpecificationsꢀ-ꢀLTEꢀOperationꢀ(RBꢀ=ꢀ12,ꢀSTARTꢀ=ꢀ0,ꢀQPSK)
(TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
COMMENTS
Operating Frequency (f)
1920
-
1980
MHz
UMTS Band 1
RF Output Power (Pmax) (1)
LTE, HPM
LTE, LPM
26.45
15.2
27.25
16
27.25
16
dBm
dB
TS 36.101 Rel 8 for LTE
25
12
27
13
30
16
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
Gain
ACLR E-UTRA (2)
at ± 10 MHz offset
-
-
-38
-38
-
-
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
dBc
dBc
dBc
%
ACLR1 UTRA (2)
at ± 7.5 MHz offset
-
-
-39
-39
-
-
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
ACLR2 UTRA (2)
at ± 12.5 MHz offset
-
-
-60
-60
-
-
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
-
-
36
22
-
-
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
Power-Added Efficiency (2)
Noise emissions B34
2010 - 2025 MHz, 100 RB QPSK
LTE signal centered at 1970
MHz at LTE max power
-
-
-38
-48
-35
-42
dBm/
MHz
dBm/
300 kHz
LTE NS_05 PHS emissions
1884.5 - 1919.6 MHz
POUT ≤ +27.25 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating condi-
tions
Spurious Output Level
(all spurious outputs)
-
-
-
<-70
dBc
Load mismatch stress with
no permanent degradation or
failure
8:1
-
VSWR
Applies over full operating range
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1950 MHz.
Data Sheet - Rev 2.7
03/2012
5