AWT6631
Tableꢀ10:ꢀElectricalꢀSpecificationsꢀ-ꢀTD-SCDMAꢀOperation
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
COMMENTS
3GPP TS 25.12
Section 5.2a,f
Operating Frequency (f)
1880
-
1920
MHz
RF Output Power (Pmax) (1)
TD-SCDMA, HPM
TD-SCDMA, LPM
26.2
15.2
27
16
27
16
3GPP TS 25.62
Section 6.2.1
dBm
dB
25
12
27
13
30
16
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Gain
-
-
-42
-42
-
-
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
ACLR1 at 1.6 MHz offset (2)
ACLR2 at 3.2 MHz offset (2)
Power-Added Efficiency (2)
dBc
dBc
%
-
-
-55
-55
-
-
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
-
-
36
20
-
-
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode
-
-
-
-
-
8
13
0.5
0.5
5
mA
mA
mA
mA
µA
VMODE1 = +1.8 V
through VMODE pin, VMODE1 =
+1.8 V
Mode Control Current
Enable Current
0.3
0.3
2.5
4
through VENABLE pin, VEN =
+1.8 V
through VBATT pin, VMODE1 =
+1.8 V
BATT Current
VBATT = +4.2 V, VCC = +4.2 V
VENABLE = 0 V, VMODE1 = 0 V
Leakage Current
-
Harmonics
2fO
3fO, 4fO
-
-
-
-
-35
-50
dBc
POUT ≤ +27 dBm
Input Impedance
-
-
2:1
VSWR
Load mismatch stress with
no permanent degradation or
failure
Applies over full operating
range
8:1
-
-
VSWR
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1900 MHz.
Data Sheet - Rev 2.7
03/2012
9