AWT6631
Tableꢀ9:ꢀElectricalꢀSpecificationsꢀ-ꢀTD-LTEꢀOperation,ꢀBandꢀ34ꢀ(10ꢀMHzꢀQPSK,ꢀ12ꢀRB,ꢀStartꢀ=ꢀ0)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLEꢀ=ꢀ0ꢀV,ꢀ50ꢀΩꢀsystem)
PARAMETER
MIN
TYP
MAX
UNITS
COMMENTS
Operating Frequency (f)
2010
-
2025
MHz
Band 34
RF Output Power (Pmax) (1)
LTE (MPR = 0), HPM
LTE (MPR = 0), LPM
26
15.5
27
16
27
16
dBm
dB
TS 36.101 Rel 8 for LTE
25
12
27
13
30
16
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Gain
-
-
-38
-38
-36
-36
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
LTE to LTE, E-UTRA (2)
UTRA ACLR1 (2)
UTRA ACLR2 (2)
Power-Added Efficiency (2)
dBc
dBc
dBc
%
-
-
-39
-38
-36
-36
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
-
-
-62
-60
-42
-42
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
-
-
35
23
-
-
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode
-
8
-
mA
through VCC pin
Harmonics
2fO
3fO, 4fO
-
-
-
-
-35
-50
dBc
dBc
POUT ≤ +27 dBm
POUT ≤ +27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating condi-
tions
Spurious Output Level
(all spurious outputs)
-
-
-
-70
-
Load mismatch stress with
no permanent degradation or
failure
8:1
VSWR
Applies over full operating range
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 2017.5 MHz.
Data Sheet - Rev 2.7
03/2012
8