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A43E26161 参数 Datasheet PDF下载

A43E26161图片预览
型号: A43E26161
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行低功耗同步DRAM [1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 44 页 / 1119 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43E26161  
Pin Descriptions  
Symbol  
Name  
Description  
CLK  
CS  
System Clock  
Chip Select  
Active on the positive going edge to sample all inputs.  
Disables or Enables device operation by masking or enabling all inputs except  
CLK, CKE and L(U)DQM  
Masks system clock to freeze operation from the next clock cycle.  
CKE should be enabled at least one clock + tss prior to new command.  
Disable input buffers for power down in standby.  
CKE  
Clock Enable  
Row / Column addresses are multiplexed on the same pins.  
Row address : RA0~RA11, Column address: CA0~CA7  
Selects bank to be activated during row address latch time.  
Selects band for read/write during column address latch time.  
A0~A11  
Address  
BS0, BS1  
Bank Select Address  
Row Address Strobe  
Latches row addresses on the positive going edge of the CLK with RAS low.  
Enables row access & precharge.  
RAS  
CAS  
Latches column addresses on the positive going edge of the CLK with CAS low.  
Enables column access.  
Column Address  
Strobe  
Write Enable  
Enables write operation and Row precharge.  
WE  
Makes data output Hi-Z, t SHZ after the clock and masks the output.  
Blocks data input when L(U)DQM active.  
Data Input/Output  
Mask  
L(U)DQM  
DQ0-15  
Data Input/Output  
Data inputs/outputs are multiplexed on the same pins.  
Power  
Supply/Ground  
VDD/VSS  
Power Supply: +1.7V ~ 1.95V/Ground  
Data Output  
Power/Ground  
VDDQ/VSSQ  
NC/RFU  
Provide isolated Power/Ground to DQs for improved noise immunity.  
No Connection  
(December, 2004, Version 1.0)  
3
AMIC Technology, Corp.  
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