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N64S0818HDA 参数 Datasheet PDF下载

N64S0818HDA图片预览
型号: N64S0818HDA
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kb的低功耗串行SRAM的8K × 8位组织 [64Kb Low Power Serial SRAMs 8K 】 8 bit Organization]
分类和应用: 静态存储器
文件页数/大小: 15 页 / 201 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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N64S0818HDA/N64S0830HDA  
Advance Information  
AMI Semiconductor, Inc.  
Page and Burst WRITE Sequence  
CS  
SCK  
0
1
2
3
4
5
6
7
8
9
10 11  
21 22 23 24 25 26 27 28 29 30 31  
Instruction  
16-bit address  
SI  
0
0
0
0
0
0
1
0
15 14 13 12  
2
1
0
7
6
5
4
3
2
1
0
ADDR 1  
Data In to ADDR 1  
SO  
High-Z  
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47  
Data In to ADDR 2 Data In to ADDR 3  
Data In to ADDR n  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
...  
High-Z  
Page WRITE Sequence  
Data Words: sequential, at the end of the page the  
address wraps back to the beginning of the page  
SI  
16-bit address  
Page address (X)  
Word address (Y)  
Page X  
Word Y  
Page X  
Word Y+1 Word Y+2  
Page X  
Page X  
Word 31 Word 0  
Page X  
Page X  
Word 1  
SO  
High-Z  
Burst WRITE Sequence  
. . .  
. . .  
SI  
16-bit address  
Page address (X)  
Word address (Y)  
Page X  
Word Y  
Page X  
Word Y+1  
Page X  
Word 31 Word 0  
Page X  
Page X  
Word 1  
Page X  
Page X+1 Page X+1  
Word Y-1 Word Y Word Y+1  
Data Words: sequential, at the end of the page the address wraps to the beginning of the page and  
continues incrementing up to the starting word address. At that time, the address increments to the  
next page and the burst continues.  
SO  
High-Z  
10  
This is a developmental specification and is subject to change without notice.