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AMIS-734512 参数 Datasheet PDF下载

AMIS-734512图片预览
型号: AMIS-734512
PDF下载: 下载PDF文件 查看货源
内容描述: 为25μm ,间距宽孔径光谱光电二极管阵列 [25レm-pitch Wide Aperture Spectroscopic Photodiode Arrays]
分类和应用: 光电二极管光电二极管
文件页数/大小: 9 页 / 294 K
品牌: AMI [ AMI SEMICONDUCTOR ]
 浏览型号AMIS-734512的Datasheet PDF文件第1页浏览型号AMIS-734512的Datasheet PDF文件第2页浏览型号AMIS-734512的Datasheet PDF文件第3页浏览型号AMIS-734512的Datasheet PDF文件第4页浏览型号AMIS-734512的Datasheet PDF文件第5页浏览型号AMIS-734512的Datasheet PDF文件第6页浏览型号AMIS-734512的Datasheet PDF文件第8页浏览型号AMIS-734512的Datasheet PDF文件第9页  
AMIS-734256, AMIS-734512, AMIS-734024  
Data Sheet  
25µm-pitch Wide Aperture Spectroscopic Photodiode Arrays  
9.0 Recommended Operating Conditions  
Table 3 lists the recommended operating conditions.  
Table 3: Recommended Operating Conditions at 25°C  
Parameters  
Power supply  
Symbol  
VDD  
Vih  
Vil  
Vbias  
Fclk  
Min.  
4.5  
VDD – 0.8  
0.0  
Typ.  
5.0  
VDD  
0.0  
VDD – 0.5  
0.1  
Max.  
5.5  
VDD  
0.8  
VDD  
1.0  
Units  
Volts  
Volts  
Volts  
Volts  
MHz  
Input clock pulses high level (1)  
Input clock pulse low level (1)  
Video charge output external bias  
Clock frequency  
VDD – 0.5  
0.26 (734256)  
0.52 (734512)  
1.03 (734024)  
Tint  
ms  
Integration time (2)  
11000 (w/ cap)  
Notes:  
(1) Applies to all control-clock inputs.  
(2) Integration time is specified at room temperature such that the maximum dark current charge build up in each pixel is less than 10 percent of the minimum  
saturation charge. Accordingly, it may be as long as 11 seconds at room temperature with the added capacitors. Longer integration times may be achieved by  
cooling the device. An appropriate clock frequency must be chosen so that the shift register completes its operation within the desired integration time.  
10.0 Electro-Optical Characteristics  
Table 4 lists the electro-optical characteristics.  
Table 4: Electro-Optical Characteristics at 25°C  
Parameters  
Center-to-center spacing  
Aperture width  
Symbol  
Min.  
Typ.  
25  
Max.  
Units  
µm  
2500  
µm  
Pixel area  
A
FF  
QE  
R
6.25 x 10-4  
72  
cm2  
Fill factor (1)  
%
%
Quantum efficiency (1)(2)  
Responsivity(1)(2)  
Non-uniformity of response (3)  
70  
1.5 x 10-4  
2
C/J/cm2  
+/-%  
nJ/cm2  
370 (w/cap)  
130 (w/o cap)  
55 (w/cap)  
430 (w/ cap)  
170 (w/o cap)  
65 (w/cap)  
25 (w/o cap)  
0.2  
Saturation exposure (2)  
Esat  
Qsat  
pC  
Saturation charge (4)  
20 (w/o cap)  
Average dark current (5)  
Spectral response peak  
Spectral response range (6)  
pA  
nm  
nm  
600  
λ
180 - 1000  
Notes:  
(1) Fill factor, quantum efficiency and responsivity are related by the equation R = (qel/hc).QE.FF.A, where qe is the charge of an electron and hc/l is the energy of a  
photon at a given wavelength. Responsivity is therefore given per pixel.  
(2) At wavelength of 575nm (Yellow-Green) and with no window.  
(3) Measured at 50 percent Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter.  
(4) Saturation charge specified for a video output bias of 4.5V.  
(5) Max dark leakage £ 1.5 x average dark leakage measured with an integration period of 500ms at 25°C.  
(6) From 250-1000nm, responsivity ³ 20 percent of its peak value.  
AMI Semiconductor – Aug. 06, M-20603-001  
7
www.amis.com  
 
 
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