AMIS-721250: Contact Image Sensor
4.3 Wafer Scribe Line
Data Sheet
60µm
15µm
425µm
55µm
14560µm
55µm
60µm
Figure 3: Wafer Scribe Line
5.0 Electro-Optical Specifications
°
C and Vdd = 5.0V.
Table 2: Electro-Optical Specifications
Parameter
(1)
Number of pixels
(1)
Pixel-to-pixel spacing
(2)
Sensitivity @ 600dpi
Sensitivity @ 1200dpi
(3)
Saturation voltage
(4)
Photo-response non-uniformity
(5)
Adjacent photo-response non-uniformity
(6)
Dark output voltage level
(7)
Dark output non-uniformity
(8)
Random thermal noise (rms)
(9)
Sensor-to-sensor photo-response non-uniformity
(10)
Photo response linearity
Analog output drive current
Symbol
Min.
344 or 688
42.3 / 21.15
Typ.
Max.
344 or 688
42.3 / 21.15
Units
µm
V / uJ / cm
15
15
1.7
100
3.0
10
2
>1.0
Volts
%
%
V
mV
mV
%
%
mA
2
Sv
VSat
Up
Upn
Vd
Ud
Vno
Usensor
PRL
Iout
1220
610
1.65
Notes for Table 2 are listed on the next page under “Definitions of Electro-Optical Specifications”.
AMI Semiconductor
– Dec. 05, M-20496-004
www.amis.com
5
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