Precision amplifier for bridge circuits
AM457
ELECTRICAL SPECIFICATIONS
T
amb = 25°C, VCC = 5V (unless otherwise stated)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Voltage Range
Quiescent Current
Temperature Specifications
Operating
Storage
Junction
VCC
ICC
4.5
5
1.5
5.5
2.5
V
mA
T
amb = -40...+85°C
Tamb
Tst
TJ
-45
-55
125
150
150
°C
°C
°C
Thermal Resistance
DIL8 plastic package
111
181
°C/W
°C/W
Θja
SO8 narrow plastic package
Θja
Amplifier AMP
Offset Voltage
VOS
mV
µV/°C
µV
±0.1
±0.5
±0.3
±1.2
±120
200
V
OS vs. Temperature
OS vs. Temperature
dVOS/dT
dVOS/dT
IB
Tamb= -45…105°C
Tamb= 105…125°C
V
Input Bias Current
VCM = 2.5V
30
nA
IB vs. Temperature
dIB/dT
VIN
T
amb= -45…125°C
–130
–600
pA/°C
mV
Differential Input Voltage
V
IN =VIN+ – VIN-
±5
±100
±5
Input Offset Current
IOS
V
T
CM = 2.5V
amb= -45…125°C
nA
±0.5
±2.5
100
90
IOS vs. Temperature
dIOS/dT
pA/°C
±30
Input Resistance
RIN
VCM / IB,typ (VCM = 2.5V)
MΩ
pF
Input Capacitance
CIN
Common Mode Input Range
Common Mode Rejection Ratio
Open Loop Gain
CMIR
CMRR
G0
1
VCC – 1.3
V
120
120
10
135
140
dB
dB
Adjustable Gain
G
Output Voltage Range
Output Current
Output Load Capacitance
Output Load Resistance
VOUT
IOUT
CL
0.2
250
1
VCC – 0.2
V
µA
nF
Sink and source
Sink and source
5
RL
20
kΩ
dB
kHz
Power Supply Rejection Ratio
Gain Bandwidth Product
PSRR
GBW
90
110
30
G = 10; C1 = 1nF; RL = 20kΩ
Including filters for EMC
protection
Non Linearity
Slew Rate
G ≤ 100
10-4
30
SR
0.3
0.8
V/µs
C1 = 1nF; RL = 20kΩ
Input Voltage Noise
T
amb, ;Rs = 1kΩ; VCC = 5V
nV/√Hz
e
n
Rs = Source Impedance
analog microelectronics
May 2005
Analog Microelectronics GmbH
An der Fahrt 13, D – 55124 Mainz
Internet: www.analogmicro.de
Phone: +49 (0)6131/91 073 – 0
4/10
Fax:
+49 (0)6131/91 073 – 30
Rev. 2.2
Email: info@analogmicro.de