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M41000002T 参数 Datasheet PDF下载

M41000002T图片预览
型号: M41000002T
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同步读/写闪存和8兆位( 1一M× 8位/ 512的K× 16位)静态RAM [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM]
分类和应用: 闪存
文件页数/大小: 66 页 / 1128 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
Table 20. Write Operation Status  
DQ7  
(Note 2)  
DQ5  
(Note 1)  
DQ2  
(Note 2)  
Status  
DQ6  
DQ3  
RY/BY#  
Embedded Program Algorithm  
Embedded Erase Algorithm  
Erase  
DQ7#  
0
Toggle  
Toggle  
0
0
N/A  
1
No toggle  
Toggle  
0
0
Standard  
Mode  
1
No toggle  
0
N/A  
Toggle  
1
Suspended Sector  
Erase-Suspend-  
Read  
Erase  
Suspend  
Mode  
Non-Erase  
Data  
Data  
Data  
0
Data  
N/A  
Data  
N/A  
1
0
Suspended Sector  
Erase-Suspend-Program  
DQ7#  
Toggle  
Notes:  
1. DQ5 switches to 1when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.  
Refer to the section on DQ5 for more information.  
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further  
details.  
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm  
is in progress. The device outputs array data if the system addresses a non-busy bank.  
September 5, 2002  
Am41DL32x8G  
37  
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