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L160DB90VC 参数 Datasheet PDF下载

L160DB90VC图片预览
型号: L160DB90VC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1792 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
toggling, the device has successfully completed the  
program or erase operation. If it is still toggling, the de-  
vice did not complete the operation successfully, and  
the system must write the reset command to return to  
reading array data.  
START  
The remaining scenario is that the system initially de-  
termines that the toggle bit is toggling and DQ5 has  
not gone high. The system may continue to monitor  
the toggle bit and DQ5 through successive read cy-  
cles, determining the status as described in the  
previous paragraph. Alternatively, it may choose to  
perform other system tasks. In this case, the system  
must start at the beginning of the algorithm when it re-  
turns to determine the status of the operation (top of  
Figure 6).  
Read DQ7–DQ0  
Read DQ7–DQ0  
(Note 1)  
No  
Toggle Bit  
= Toggle?  
Yes  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Twice  
(Notes  
1, 2)  
Toggle Bit  
= Toggle?  
No  
Yes  
Program/Erase  
Operation Not  
Complete, Write  
Reset Command  
Program/Erase  
Operation Complete  
Notes:  
1. Read toggle bit twice to determine whether or not it is  
toggling. See text.  
2. Recheck toggle bit because it may stop toggling as DQ5  
changes to “1”. See text.  
Figure 6. Toggle Bit Algorithm  
22358B7 May 5, 2006  
Am29LV160D  
27  
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