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L160DB90VC 参数 Datasheet PDF下载

L160DB90VC图片预览
型号: L160DB90VC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1792 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
Command Definitions  
Table 9. Am29LV160D Command Definitions  
Bus Cycles (Notes 2–5)  
Command  
Sequence  
(Note 1)  
First  
Second  
Third  
Addr  
Fourth  
Data Addr Data  
Fifth  
Sixth  
Addr Data Addr Data  
Addr Data Addr Data  
Read (Note 6)  
Reset (Note 7)  
1
1
RA  
XXX  
555  
RD  
F0  
Word  
2AA  
555  
2AA  
555  
2AA  
555  
555  
AAA  
555  
Manufacturer ID  
4
4
4
AA  
AA  
AA  
55  
55  
55  
90  
90  
90  
X00  
01  
Byte  
Word  
Byte  
Word  
Byte  
AAA  
555  
X01  
X02  
X01  
X02  
22C4  
C4  
Device ID,  
Top Boot Block  
AAA  
555  
AAA  
555  
2249  
49  
Device ID,  
Bottom Boot Block  
AAA  
AAA  
XX00  
XX01  
00  
(SA)  
X02  
Word  
Byte  
555  
2AA  
555  
555  
Sector Protect Verify  
(Note 9)  
4
AA  
55  
90  
(SA)  
X04  
AAA  
AAA  
01  
Word  
Byte  
Word  
Byte  
Word  
Byte  
55  
CFI Query (Note 10)  
1
4
3
98  
AA  
AA  
AA  
555  
2AA  
555  
2AA  
555  
PA  
555  
AAA  
555  
Program  
55  
55  
A0  
20  
PA  
PD  
AAA  
555  
AAA  
XXX  
XXX  
555  
Unlock Bypass  
AAA  
Unlock Bypass Program (Note 11)  
Unlock Bypass Reset (Note 12)  
2
2
A0  
90  
PD  
00  
XXX  
2AA  
555  
2AA  
555  
Word  
555  
AAA  
555  
555  
AAA  
555  
2AA  
555  
2AA  
555  
555  
Chip Erase  
Byte  
6
6
AA  
AA  
55  
55  
80  
80  
AA  
AA  
55  
55  
10  
30  
AAA  
555  
AAA  
Word  
Sector Erase  
Byte  
SA  
AAA  
XXX  
XXX  
AAA  
AAA  
Erase Suspend (Note 13)  
Erase Resume (Note 14)  
1
1
B0  
30  
Legend:  
X = Don’t care  
PD = Data to be programmed at location PA. Data latches on the rising  
edge of WE# or CE# pulse, whichever happens first.  
RA = Address of the memory location to be read.  
SA = Address of the sector to be verified (in autoselect mode) or  
erased. Address bits A19–A12 uniquely select any sector.  
RD = Data read from location RA during read operation.  
PA = Address of the memory location to be programmed. Addresses  
latch on the falling edge of the WE# or CE# pulse, whichever happens  
later.  
Notes:  
1. See Table 1 for description of bus operations.  
2. All values are in hexadecimal.  
9. The data is 00h for an unprotected sector and 01h for a  
protected sector. See “Autoselect Command Sequence” for  
more information.  
3. Except for the read cycle and the fourth cycle of the autoselect  
command sequence, all bus cycles are write cycles.  
10. Command is valid when device is ready to read array data or  
when device is in autoselect mode.  
4. Data bits DQ15–DQ8 are don’t cares for unlock and command  
cycles.  
11. The Unlock Bypass command is required prior to the Unlock  
Bypass Program command.  
5. Address bits A19–A11 are don’t cares for unlock and  
command cycles, unless SA or PA required.  
12. The Unlock Bypass Reset command is required to return to  
reading array data when the device is in the unlock bypass  
mode.  
6. No unlock or command cycles required when reading array  
data.  
7. The Reset command is required to return to reading array data  
when device is in the autoselect mode, or if DQ5 goes high  
(while the device is providing status data).  
13. The system may read and program in non-erasing sectors, or  
enter the autoselect mode, when in the Erase Suspend mode.  
The Erase Suspend command is valid only during a sector  
erase operation.  
8. The fourth cycle of the autoselect command sequence is a  
read cycle.  
14. The Erase Resume command is valid only during the Erase Suspend mode.  
24  
Am29LV160D  
May 5, 2006 22358B7  
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