D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
= V to V
Min
Typ
Max
±1.0
35
Unit
µA
V
V
,
CC
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to V
,
OUT
SS
CC
I
±1.0
µA
LO
= V
CC
CC max
5 MHz
1 MHz
5 MHz
1 MHz
9
2
9
2
16
4
CE# = V OE#
Byte Mode
V
V
IL,
=
=
IH,
IH,
V
Active Read Current
CC
I
mA
CC1
(Notes 1, 2)
16
4
CE# = V OE#
IL,
Word Mode
V
Active Write Current
CC
I
I
I
CE# = V OE# = V
IH
20
0.2
0.2
30
5
mA
µA
µA
CC2
CC3
CC4
IL,
(Notes 2, 3, 5)
V
Standby Current (Notes 2, 4) CE#, RESET# = V ±0.3 V
CC
CC
V
Standby Current During Reset
CC
RESET# = V ± 0.3 V
5
SS
(Notes 2, 4)
Automatic Sleep Mode
(Notes 2, 4, 6)
V
V
= V ± 0.3 V;
CC
IH
IL
I
0.2
5
µA
CC5
= V ± 0.3 V
SS
V
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
IL
V
V
0.7 x V
V
+ 0.3
CC
IH
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
CC min
V
V
OL
OL
OH
OH
CC
V
= -2.0 mA, V = V
0.85 x V
CC
OH1
OH2
CC
CC min
CC min
Output High Voltage
V
= -100 µA, V = V
V
–0.4
CC
CC
V
Low V Lock-Out Voltage (Note 4)
2.3
2.5
V
LKO
CC
Notes:
1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.
CC
IH
CC
2. Maximum I specifications are tested with V = V max.
CC
CC
CC
3. I active while Embedded Erase or Embedded Program is in progress.
CC
4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t
200 nA.
+ 30 ns. Typical sleep mode current is
ACC
6. Not 100% tested.
22358B7 May 5, 2006
Am29LV160D
31
AMD [ AMD ]
