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L160DB90VC 参数 Datasheet PDF下载

L160DB90VC图片预览
型号: L160DB90VC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1792 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
COMMAND DEFINITIONS  
Writing specific address and data commands or se-  
quences into the command register initiates device  
operations. Table 9 defines the valid register command  
sequences. Writing incorrect address and data val-  
ues or writing them in the improper sequence resets  
the device to reading array data.  
The reset command may be written between the se-  
quence cycles in an autoselect command sequence.  
Once in the autoselect mode, the reset command  
must be written to return to reading array data (also  
applies to autoselect during Erase Suspend).  
If DQ5 goes high during a program or erase operation,  
writing the reset command returns the device to read-  
ing array data (also applies during Erase Suspend).  
All addresses are latched on the falling edge of WE#  
or CE#, whichever happens later. All data is latched on  
the rising edge of WE# or CE#, whichever happens  
first. Refer to the appropriate timing diagrams in the  
“AC Characteristics” section.  
Autoselect Command Sequence  
The autoselect command sequence allows the host  
system to access the manufacturer and devices  
codes, and determine whether or not a sector is pro-  
tected. Table 9 shows the address and data  
requirements. This method is an alternative to that  
shown in Table 4, which is intended for PROM pro-  
Reading Array Data  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data. The device is also ready to read array  
data after completing an Embedded Program or Em-  
bedded Erase algorithm.  
grammers and requires V on address bit A9.  
ID  
The autoselect command sequence is initiated by writ-  
ing two unlock cycles, followed by the autoselect  
command. The device then enters the autoselect  
mode, and the system may read at any address any  
number of times, without initiating another command  
sequence.  
After the device accepts an Erase Suspend com-  
mand, the device enters the Erase Suspend mode.  
The system can read array data using the standard  
read timings, except that if it reads at an address  
within erase-suspended sectors, the device outputs  
status data. After completing a programming opera-  
tion in the Erase Suspend mode, the system may  
once again read array data with the same exception.  
See “Erase Suspend/Erase Resume Commands” for  
more information on this mode.  
A read cycle at address XX00h retrieves the manufac-  
turer code. A read cycle at address XX01h returns the  
device code. A read cycle containing a sector address  
(SA) and the address 02h in word mode (or 04h in  
byte mode) returns 01h if that sector is protected, or  
00h if it is unprotected. Refer to Tables 2 and 3 for  
valid sector addresses.  
The system must issue the reset command to re-en-  
able the device for reading array data if DQ5 goes  
high, or while in the autoselect mode. See the “Reset  
Command” section, next.  
The system must write the reset command to exit the  
autoselect mode and return to reading array data.  
See also “Requirements for Reading Array Data” in  
the “Device Bus Operations” section for more informa-  
tion. The Read Operations table provides the read  
parameters, and Figure 13 shows the timing diagram.  
Word/Byte Program Command Sequence  
The system may program the device by word or byte,  
depending on the state of the BYTE# pin. Program-  
ming is a four-bus-cycle operation. The program  
command sequence is initiated by writing two unlock  
write cycles, followed by the program set-up com-  
mand. The program address and data are written  
next, which in turn initiate the Embedded Program al-  
gorithm. The system is not required to provide further  
controls or timings. The device automatically gener-  
ates the program pulses and verifies the programmed  
cell margin. Table 9 shows the address and data re-  
quirements for the byte program command  
sequence.  
Reset Command  
Writing the reset command to the device resets the  
device to reading array data. Address bits are don’t  
care for this command.  
The reset command may be written between the se-  
quence cycles in an erase command sequence before  
erasing begins. This resets the device to reading array  
data. Once erasure begins, however, the device ig-  
nores reset commands until the operation is complete.  
The reset command may be written between the se-  
quence cycles in a program command sequence  
before programming begins. This resets the device to  
reading array data (also applies to programming in  
Erase Suspend mode). Once programming begins,  
however, the device ignores reset commands until the  
operation is complete.  
When the Embedded Program algorithm is complete,  
the device then returns to reading array data and ad-  
dresses are no longer latched. The system can  
determine the status of the program operation by  
using DQ7, DQ6, or RY/BY#. See “Write Operation  
Status” for information on these status bits.  
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Am29LV160D  
May 5, 2006 22358B7  
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