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L160DB90VC 参数 Datasheet PDF下载

L160DB90VC图片预览
型号: L160DB90VC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1792 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
Table 8. Primary Vendor-Specific Extended Query  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
40h  
41h  
42h  
80h  
82h  
84h  
0050h  
0052h  
0049h  
Query-unique ASCII string “PRI”  
43h  
44h  
86h  
88h  
0031h  
0030h  
Major version number, ASCII  
Minor version number, ASCII  
Address Sensitive Unlock  
0 = Required, 1 = Not Required  
45h  
46h  
47h  
48h  
8Ah  
8Ch  
8Eh  
90h  
0000h  
0002h  
0001h  
0001h  
Erase Suspend  
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write  
Sector Protect  
0 = Not Supported, X = Number of sectors in per group  
Sector Temporary Unprotect  
00 = Not Supported, 01 = Supported  
Sector Protect/Unprotect scheme  
49h  
92h  
0004h  
01 = 29F040 mode, 02 = 29F016 mode,  
03 = 29F400 mode, 04 = 29LV800A mode  
Simultaneous Operation  
00 = Not Supported, 01 = Supported  
4Ah  
4Bh  
4Ch  
94h  
96h  
98h  
0000h  
0000h  
0000h  
Burst Mode Type  
00 = Not Supported, 01 = Supported  
Page Mode Type  
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page  
Hardware Data Protection  
The command sequence requirement of unlock cycles  
for programming or erasing provides data protection  
against inadvertent writes (refer to Table 9 for com-  
mand definitions). In addition, the following hardware  
data protection measures prevent accidental erasure  
or programming, which might otherwise be caused by  
Write Pulse “Glitch” Protection  
Noise pulses of less than 5 ns (typical) on OE#, CE#  
or WE# do not initiate a write cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# =  
spurious system level signals during V  
power-up  
CC  
V , CE# = V or WE# = V . To initiate a write cycle,  
IL  
IH  
IH  
and power-down transitions, or from system noise.  
CE# and WE# must be a logical zero while OE# is a  
logical one.  
Low V  
Write Inhibit  
CC  
When V  
is less than V  
, the device does not ac-  
LKO  
Power-Up Write Inhibit  
CC  
cept any write cycles. This protects data during V  
CC  
If WE# = CE# = V and OE# = V during power up,  
IL  
IH  
power-up and power-down. The command register  
and all internal program/erase circuits are disabled,  
and the device resets. Subsequent writes are ignored  
the device does not accept commands on the rising  
edge of WE#. The internal state machine is automati-  
cally reset to reading array data on power-up.  
until V  
is greater than V  
. The system must pro-  
CC  
LKO  
vide the proper signals to the control pins to prevent  
unintentional writes when V is greater than V  
.
CC  
LKO  
22358B7 May 5, 2006  
Am29LV160D  
19  
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