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AM29LV017D-120EC 参数 Datasheet PDF下载

AM29LV017D-120EC图片预览
型号: AM29LV017D-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位) CMOS 3.0伏只统一部门快闪记忆体 [16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 48 页 / 952 K
品牌: AMD [ AMD ]
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data. The system can read CFI information at the  
addresses given in Tables 4–7. To terminate reading  
CFI data, the system must write the reset command.  
COMMON FLASH MEMORY INTERFACE  
(CFI)  
The Common Flash Interface (CFI) specification out-  
lines device and host system software interrogation  
handshake, which allows specific vendor-specified  
software algorithms to be used for entire families of  
devices. Software support can then be device-indepen-  
dent, JEDEC ID-independent, and forward- and back-  
ward-compatible for the specified flash device families.  
Flash vendors can standardize their existing interfaces  
for long-term compatibility.  
The system can also write the CFI query command  
when the device is in the autoselect mode. The device  
enters the CFI query mode, and the system can read  
CFI data at the addresses given in Tables 4–7. The  
system must write the reset command to return the  
device to the autoselect mode.  
For further information, please refer to the CFI Specifi-  
cation and CFI Publication 100, available via the World  
Wide Web at http://www.amd.com/products/nvd/over-  
view/cfi.html. Alternatively, contact an AMD represen-  
tative for copies of these documents.  
This device enters the CFI Query mode when the  
system writes the CFI Query command, 98h, to  
address 55h, any time the device is ready to read array  
Table 4. CFI Query Identification String  
Addresses  
Data  
Description  
10h  
11h  
12h  
51h  
52h  
59h  
Query Unique ASCII string “QRY”  
Primary OEM Command Set  
13h  
14h  
02h  
00h  
15h  
16h  
40h  
00h  
Address for Primary Extended Table  
17h  
18h  
00h  
00h  
Alternate OEM Command Set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19h  
1Ah  
00h  
00h  
Table 5. System Interface String  
Description  
Addresses  
Data  
V
Min. (write/erase)  
CC  
1Bh  
27h  
D7–D4: volt, D3–D0: 100 millivolt  
V
Max. (write/erase)  
CC  
1Ch  
36h  
D7–D4: volt, D3–D0: 100 millivolt  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
00h  
00h  
04h  
00h  
0Ah  
00h  
05h  
00h  
04h  
00h  
V
V
Min. voltage (00h = no V pin present)  
PP  
PP  
PP  
Max. voltage (00h = no V pin present)  
PP  
N
Typical timeout per single byte/word write 2 µs  
N
Typical timeout for Min. size buffer write 2 µs (00h = not supported)  
N
Typical timeout per individual block erase 2 ms  
N
Typical timeout for full chip erase 2 ms (00h = not supported)  
N
Max. timeout for byte/word write 2 times typical  
N
Max. timeout for buffer write 2 times typical  
N
Max. timeout per individual block erase 2 times typical  
N
Max. timeout for full chip erase 2 times typical (00h = not supported)  
Am29LV017D  
19  
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