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AM29F040-150JC 参数 Datasheet PDF下载

AM29F040-150JC图片预览
型号: AM29F040-150JC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 524,288 ×8位) CMOS 5.0伏只,扇区擦除闪存 [4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 33 页 / 418 K
品牌: AMD [ AMD ]
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rising edge of CE or WE (whichever happens first)  
begins programming. Upon executing the Embedded  
Program Algorithm command sequence the system is  
not required to provide further controls or timings. The  
device will automatically provide adequate internally  
generated program pulses and verify the programmed  
cell margin.  
Sector Erase  
Sector erase is a six bus cycle operation.There are two  
“unlock” write cycles. These are followed by writing the  
“setup” command. Two more “unlock” write cycles are  
then followed by the sector erase command.The sector  
address (any address location within the desired sector)  
is latched on the falling edge of WE, while the command  
(data) is latched on the rising edge of WE. A time-out  
of 80 µs from the rising edge of the last sector erase  
command will initiate the sector erase command(s).  
The automatic programming operation is completed  
when the data on DQ7 is equivalent to data written to  
this bit (see Write Operation Status section) at which  
time the device returns to the read mode and ad-  
dresses are no longer latched. Therefore, the device  
requires that a valid address to the device be supplied  
by the system at this particular instance of time. Hence,  
Data Polling must be performed at the memory location  
which is being programmed.  
Multiple sectors may be erased concurrently by writing  
the six bus cycle operations as described above. This  
sequence is followed with writes of the Sector Erase  
command to addresses in other sectors desired to be  
concurrently erased. The time between writes must be  
less than 80 µs, otherwise that command will not be ac-  
cepted. It is recommended that processor interrupts be  
disabled during this time to guarantee this condition.  
The interrupts can be re-enabled after the last Sector  
Erase command is written. A time-out of 80 µs from the  
rising edge of the last WE will initiate the execution of  
the Sector Erase command(s). If another falling edge of  
the WE occurs within the 80 µs time-out window the  
timer is reset. (Monitor DQ3 to determine if the sector  
erase window is still open, see section DQ3, Sector  
Erase Timer.) Any command other than Sector Erase  
or Erase Suspend during this period resets the device  
to read mode, ignoring the previous command string. In  
that case, restart the erase on those sectors and allow  
them to complete. (Refer to the Write Operation Status  
section for Sector Erase Timer operation.) Loading the  
sector erase buffer may be done in any sequence and  
with any number of sectors (1 to 8).  
Any commands written to the chip during this period  
will be ignored.  
Programming is allowed in any sequence and across  
sector boundaries. Beware that a data “0” cannot be  
programmed back to a “1”. Attempting to do so may  
cause the device to exceed programming time limits  
(DQ5 = 1) or result in an apparent success, according  
to the data polling algorithm, but a read from reset/read  
mode will show that the data is still “0”. Only erase  
operations can convert “0”s to “1”s.  
Figure 1 illustrates the Embedded Programming Algorithm  
using typical command strings and bus operations.  
Chip Erase  
Chip erase is a six bus cycle operation. There are two  
“unlock” write cycles. These are followed by writing the  
“setup” command. Two more “unlock” write cycles are  
then followed by the chip erase command.  
Sector erase does not require the user to program the  
device prior to erase. The device automatically  
programs all memory locations in the sector(s) to be  
erased prior to electrical erase. When erasing a sector  
or sectors the remaining unselected sectors are not  
affected. The system is not required to provide any  
controls or timings during these operations.  
Chip erase does not require the user to program the  
device prior to erase. Upon executing the Embedded  
Erase Algorithm command sequence the device auto-  
matically will program and verify the entire memory for  
an all zero data pattern prior to electrical erase. The  
chip erase is performed sequentially one sector at a  
time.The system is not required to provide any controls  
or timings during these operations.  
The automatic sector erase begins after the 80 µs time  
out from the rising edge of the WE pulse for the last  
sector erase command pulse and terminates when the  
data on DQ7 is “1" (see Write Operation Status section)  
at which time the device returns to read mode. During  
the execution of the Sector Erase command, only the  
Erase Suspend and Erase Resume commands are  
allowed. All other commands will be ignored. Data poll-  
ing must be performed at an address within any of the  
sectors being erased.  
The automatic erase begins on the rising edge of the  
last WE pulse in the command sequence and termi-  
nates when the data on DQ7 is “1” (see Write Operation  
Status section) at which time the device returns to read  
the mode.  
Figure 2 illustrates the Embedded Erase Algorithm  
using typical command strings and bus operations.  
Figure 2 illustrates the Embedded Erase Algorithm  
using typical command strings and bus operations.  
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Am29F040